STU5N80K5 Field-Effect Transistor: Exploring the Capabilities and Applications


As for the blog post, here it is:

Field-Effect Transistors (FETs) have been used in various electronic devices for decades. Through various innovations in technology, FETs are commonly found in smartphones, televisions, and computers. Their function of amplifying or switching signals make them an essential component in the modern world of electronics.

One specific FET that warrants attention is the STU5N80K5. This transistor boasts a range of features that make it suitable for a wide variety of applications.

Overview of STU5N80K5

The STU5N80K5 is a N-channel, 800V, 5A, SuperMESH power MOSFET with a low gate charge and an excellent switching performance. It is designed to reduce the power loss and increase power density when switching high loads. With a large number of advantages, applications can transform into improved efficiency, reliability, and durability.

Features of STU5N80K5

The STU5N80K5 features a 1.5V maximum threshold voltage, a 1.4V maximum gate-source threshold voltage, and a 5A maximum drain current. These traits make it suitable for high voltage, high current applications where conventional FETs would not suffice.

The STU5N80K5 is built with the SuperMESH technology, providing for an even distribution of power across the silicon chip. With this technology comes a reduced risk of overheating and damage, allowing the FET to run cooler and last longer.

Moreover, the STU5N80K5 has a low on-state resistance (RDS(ON)) that lessens the conduction losses in the circuit. This characteristic is critical in DC-DC conversion, where a high efficiency is needed to maximize performance.

Lastly, the FET has a low gate charge (Qg) value, indicating fast switching speeds. The speed is crucial in applications where high-frequency switching currents occur such as in switching power supplies, uninterruptible power supplies, and current-fed power supplies.

Applications of STU5N80K5

Due to its impressive features, the STU5N80K5 is suitable for a plethora of applications in power supply design, such as in lighting systems, Telecom and data storage, industrial automation, and medical equipment.

The STU5N80K5 can also be used in Power over Ethernet (PoE) applications. PoE is the use of a single Ethernet cable to provide both data connectivity and electric power to devices such as wireless access points and VoIP phones.

Another application of STU5N80K5 is in motor control circuits. The transistor's low RDS(ON) and fast switching speeds make it ideal for circuits that require a high level of precision when driving motors.

Lastly, the FET can be used in renewable energy applications like solar power inverters and battery management systems. The circuitry involved in solar power and battery management require high levels of efficiency to operate. The STU5N80K5's efficiency characteristics make it an optimal choice for those applications.

Key Benefits of STU5N80K5

The STU5N80K5 offers some key benefits:

High voltage and current capacity

Low on-state resistance (RDS(ON))

Low gate charge (Qg)

SuperMESH technology for reduced overheating and damage

Suitable for various applications in power supply circuits, PoE, motor control circuits, and renewable energy applications

Conclusion

All in all, the STU5N80K5 field-effect transistor is a powerful electronic device with various applications across multiple industries. Its features revolve around high voltage capacity, low on-state resistance, and fast switching speeds, making it very efficient, reliable, and durable. With operating at low temperatures and extended life span, the STU5N80K5 proves to be the ultimate FET necessary for high-performance electronic devices.


STU5N80K5

STU5N80K5

Part Number :
STU5N80K5
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 800V 4A IPAK
Datasheet :
STU5N80K5.pdf
Unit Price :
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In Stock :
2032
Lead Time :
To be Confirmed
Quick Inquiry :
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    STU5N80K5 Specifications

    Packaging:
    Tube
    Series:
    MDmesh™ K5
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    800 V
    Current-ContinuousDrain(Id)@25°C:
    4A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    1.75Ohm @ 2A, 10V
    Vgs(th)(Max)@Id:
    5V @ 100µA
    GateCharge(Qg)(Max)@Vgs:
    5 nC @ 10 V
    Vgs(Max):
    ±30V
    InputCapacitance(Ciss)(Max)@Vds:
    177 pF @ 100 V
    FETFeature:
    -
    PowerDissipation(Max):
    60W (Tc)
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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