Everything You Need to Know About the STU1HN60K3 Transistor


When it comes to the world of electronic devices and circuits, transistors are a crucial component. While there are many different types of transistors available, one that deserves attention is the STU1HN60K3 transistor. It is a particularly powerful transistor that is widely used in various electronic applications.

If you're interested in learning more about the STU1HN60K3 transistor, then this article is for you. We'll cover everything you might want to know about this transistor, including its basic characteristics, how it works, and its applications.

Overview of the STU1HN60K3 Transistor

The STU1HN60K3 transistor is a n-channel power MOSFET transistor developed by STMicroelectronics. It is a part of the MDmesh K3 series of power transistors, which are designed for high-performance power conversion applications. The device is built using the latest STMicroelectronics' technology that boasts exceptional performance and compactness.

The STU1HN60K3 transistor has a maximum rated voltage of 600V and a continuous drain current of 1A. It also has a low drain-source on-resistance, which allows for low conduction losses and high efficiency. In terms of its package, the transistor is housed in a DPAK (TO-252) package and is lead-free, RoHS compliant.

How Does the STU1HN60K3 Transistor Work?

At its core, the STU1HN60K3 transistor is a MOSFET transistor. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor that allows for the dynamic control of current flow, making it ideal for use in electronic circuits.

A MOSFET transistor consists of three main parts - the gate, the drain, and the source. The gate is responsible for controlling the flow of current between the source and the drain by changing the charge on a gate structure. When a voltage is applied to the gate, an electric field is created that allows or restricts the flow of current.

The STU1HN60K3 transistor works in a similar way. It has an n-channel (source-to-drain current flows through an n-type channel) MOSFET structure that allows for the dynamic control of current flow. When a voltage is applied to the transistor's gate, the electric field formed causes the channel to establish an inversion layer. This inversion layer effectively connects the source to the drain, allowing current to flow between the two.

Applications of the STU1HN60K3 Transistor

The STU1HN60K3 transistor is a versatile component that has many applications. It is mainly used in power supply designs, power inverters, and motor control circuits.

One of the primary advantages of the STU1HN60K3 transistor is that it features a low on-state resistance and excellent switching performance. This means that it can be used in circuits that require high switching frequencies or high efficiency power conversion. Its excellent thermal performance also makes it ideal for use in harsh environments.

Here are some other uses of the STU1HN60K3 transistor:

DC-DC converters

AC-DC converters

Flyback converters

Half-bridge circuits

Full-bridge circuits

Class-D amplifiers

LED drivers

Conclusion

In this article, we've covered everything you need to know about the STU1HN60K3 transistor. We've discussed its fundamental characteristics, how it works, and its range of applications. Hopefully, this article has provided you with some useful information on this transistor and how you can use it in your electronic designs. In short, the STU1HN60K3 transistor is an excellent choice for low conduction loss and high efficiency circuits.


STU1HN60K3

STU1HN60K3

Part Number :
STU1HN60K3
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 1.2A IPAK
Datasheet :
STU1HN60K3.pdf
Unit Price :
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In Stock :
1899
Lead Time :
To be Confirmed
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    STU1HN60K3 Specifications

    Packaging:
    Tube
    Series:
    SuperMESH3™
    ProductStatus:
    Obsolete
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    600 V
    Current-ContinuousDrain(Id)@25°C:
    1.2A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    8Ohm @ 600mA, 10V
    Vgs(th)(Max)@Id:
    4.5V @ 50µA
    GateCharge(Qg)(Max)@Vgs:
    9.5 nC @ 10 V
    Vgs(Max):
    ±30V
    InputCapacitance(Ciss)(Max)@Vds:
    140 pF @ 50 V
    FETFeature:
    -
    PowerDissipation(Max):
    27W (Tc)
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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