STPSC20H12G-TR: A Powerful Silicon Carbide Schottky Diode for High-Efficiency Applications.
Silicon carbide (SiC) power devices are becoming increasingly popular in power electronics due to their high efficiency, low power loss, and high switching speed. STMicroelectronics, a global leader in semiconductor manufacturing, has recently released the STPSC20H12G-TR, a 1200V silicon carbide Schottky diode designed for high-efficiency applications.
The STPSC20H12G-TR features a low forward voltage drop of only 1.5V at 20A, which leads to reduced conduction losses and improved system efficiency, making it a game-changer for high-efficiency power electronics applications. With a maximum junction temperature of 175°C, the diode has a significantly wider operating temperature range than conventional silicon-based power devices, allowing for operation in harsh environments and minimal cooling requirements.
STMicroelectronics is known for its superior quality and reliability, and the STPSC20H12G-TR is no exception. The diode features a highly durable package with a high creepage distance which reduces the risk of high voltage breakdown. Additionally, the device has a fast reverse recovery time of just 9ns which further increases switching performance and efficiency.
The STPSC20H12G-TR's electrical performance combined with its robustness makes it an ideal choice for power electronics applications such as renewable energy systems, industrial automation, and automotive powertrains. Some of the benefits include:
1. Reduced power loss and increased efficiency leading to lower overall system costs
2. Operates in harsh environments with minimal cooling requirements
3. Increased durability and reliability with high voltage breakdown immunity
4. Enables the development of smaller, lighter, and more compact power electronics systems
5. Suitable for high-frequency and high-speed applications due to fast switching performance
In conclusion, the STPSC20H12G-TR is a game-changer for high-efficiency power electronics applications that demand high reliability, robustness, and low power losses. Its superior electrical performance and wide operating temperature range make it ideal for harsh environments, while its fast reverse recovery time and low forward voltage drop enable higher efficiency. This silicon carbide Schottky diode from STMicroelectronics is a powerful addition to the arsenal of power electronics designers and engineers.
STPSC20H12G-TR
- Part Number :
- STPSC20H12G-TR
- Manufacturer :
- STMicroelectronics
- Description :
- DIODE SCHOTTKY 1.2KV 20A D2PAK
- Datasheet :
-
STPSC20H12G-TR.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 819
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STPSC20H12G-TR Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- ECOPACK®2
- RoHS:
- RoHS
- Speed:
- No Recovery Time > 500mA (Io)
- Diode Type:
- Silicon Carbide Schottky
- Part Status:
- Active
- Mounting Type:
- Surface Mount
- Package / Case:
- 1650pF @ 0V, 1MHz
- Capacitance @ Vr, F:
- 0 ns
- Supplier Device Package:
- 120 µA @ 1200 V
- Reverse Recovery Time (trr):
- 1200 V
- Current - Reverse Leakage @ Vr:
- 20A
- Voltage - DC Reverse (Vr) (Max):
- -40°C ~ 175°C
- Current - Average Rectified (Io):
- 1.5 V @ 20 A
- Operating Temperature - Junction:
- Voltage - Forward (Vf) (Max) @ If:
STPSC20H12G-TR Guarantees
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Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
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Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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