STPSC20065W: An Overview of the Silicon Carbide MOSFET Technology
Silicon carbide (SiC) MOSFET technology is transforming power electronics with its ability to handle high voltage, high temperature, and high switching frequency requirements. One of the most promising SiC MOSFETs in the market is the STPSC20065W, a 650V, 20A device from STMicroelectronics. In this blog post, we'll be taking a closer look at the STPSC20065W.
STPSC20065W Features
Before diving into the technical details of the STPSC20065W, let's highlight its key features:
650V maximum voltage rating
20A maximum current rating
High-speed switching (100kHz)
Low on-state resistance (22mΩ)
Low leakage current (1mA)
These features make the STPSC20065W suitable for a wide range of applications, including solar inverters, electric vehicle chargers, and power supplies.
Technical Details
At the heart of the STPSC20065W is a SiC MOSFET with a trench gate structure. This structure enables the MOSFET to handle high voltages with low leakage current and low on-state resistance. Furthermore, the STPSC20065W incorporates various protection mechanisms to ensure safe and reliable operation, such as:
Overvoltage protection (OVP)
Undervoltage protection (UVP)
Overtemperature protection (OTP)
Short-circuit protection (SCP)
The STPSC20065W also has a built-in fast-recovery diode that suppresses reverse recovery current and reduces switching losses.
Benefits of SiC MOSFETs
So why are SiC MOSFETs like the STPSC20065W gaining popularity in the power electronics industry? The answer lies in their advantages over traditional silicon (Si) MOSFETs:
Higher breakdown voltage: SiC MOSFETs can handle higher voltages than Si MOSFETs, reducing the need for complex circuit topologies.
Lower on-state resistance: SiC MOSFETs have lower on-state resistance than Si MOSFETs, leading to less power dissipation and higher efficiency.
Higher switching frequencies: SiC MOSFETs can switch faster than Si MOSFETs, enabling higher power densities and smaller form factors.
Higher temperature operation: SiC MOSFETs can operate at higher temperatures than Si MOSFETs, reducing the need for cooling systems.
Overall, SiC MOSFETs offer a compelling solution for power electronics designers who want to increase efficiency, reduce size and weight, and improve reliability.
Conclusion
The STPSC20065W is an excellent example of the benefits of SiC MOSFET technology. Its high voltage and fast-switching capabilities make it suitable for a wide range of applications, from solar inverters to electric vehicle chargers. As the power electronics industry continues to evolve, SiC MOSFETs like the STPSC20065W will likely play a significant role in shaping the future of power electronics.
STPSC20065W
- Part Number :
- STPSC20065W
- Manufacturer :
- STMicroelectronics
- Description :
- DIODE SCHOTTKY 650V 20A DO247
- Datasheet :
-
STPSC20065W.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3804
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STPSC20065W Specifications
- Packaging:
- Tube
- Series:
- ECOPACK®2
- RoHS:
- RoHS
- Speed:
- No Recovery Time > 500mA (Io)
- Diode Type:
- Silicon Carbide Schottky
- Part Status:
- Active
- Mounting Type:
- Through Hole
- Package / Case:
- 1250pF @ 0V, 1MHz
- Capacitance @ Vr, F:
- 0 ns
- Supplier Device Package:
- 300 µA @ 650 V
- Reverse Recovery Time (trr):
- 650 V
- Current - Reverse Leakage @ Vr:
- 20A
- Voltage - DC Reverse (Vr) (Max):
- -40°C ~ 175°C
- Current - Average Rectified (Io):
- 1.45 V @ 20 A
- Operating Temperature - Junction:
- Voltage - Forward (Vf) (Max) @ If:
STPSC20065W Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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