STP11NM60N: Unleashing the Power of Next-Generation Transistors


Introduction:

In the ever-evolving world of electronics, the demand for faster, more efficient, and reliable components is on the rise. Electronic devices have become an integral part of our daily lives, and with each passing day, we rely on them even more. One such component that plays a crucial role in the field of power electronics is the STP11NM60N transistor.

What is STP11NM60N?

STP11NM60N is a next-generation power MOSFET transistor developed by STMicroelectronics. It is designed to offer superior performance, efficiency, and power handling capabilities, making it ideal for a wide range of applications such as industrial systems, power supplies, motor drives, and automotive electronics.

Unleashing the Power:

1. High Power Handling Capability:\

With a maximum continuous drain current rating of 11A, the STP11NM60N transistor can handle high power demands with ease. Its low on-resistance ensures minimal power loss, making it efficient in power transfer applications.

2. Enhanced Efficiency:\

The STP11NM60N transistor features a low gate charge, enabling faster switching times. This results in reduced power dissipation, improved efficiency, and reduced heat generation. Its advanced design allows it to operate at higher frequencies, further enhancing its overall performance.

3. Robust Construction:\

The STP11NM60N transistor is built using advanced process technology, which ensures high levels of reliability and durability. It can withstand high voltage and temperature variations, making it suitable for demanding environments.

4. Protection Features:\

The transistor incorporates various protection features such as over-temperature protection, over-current protection, and electrostatic discharge (ESD) protection. These features safeguard the transistor and the connected circuitry, ensuring a longer lifespan and increased reliability.

Applications:

1. Industrial Systems:\

The STP11NM60N transistor finds extensive use in industrial systems such as motor control, power converters, and switching power supplies. Its high power handling capability and efficiency make it a reliable choice for demanding industrial applications.

2. Automotive Electronics:\

With the automotive industry rapidly advancing towards electric vehicles and advanced driver-assistance systems (ADAS), the STP11NM60N transistor proves its worth by providing efficient power control and management. It is used in applications such as hybrid and electric vehicle powertrains, battery management systems, and power electronics in ADAS.

3. Power Supplies:\

The STP11NM60N transistor is widely utilized in power supply applications, including AC-DC converters and switch-mode power supplies. Its excellent switching characteristics ensure reduced power losses and increased overall efficiency.

4. Motor Drives:\

Motor drives require efficient power control and management for precise and reliable motor operation. The high power handling capability and advanced features of the STP11NM60N transistor make it an ideal choice for motor drive applications.

Conclusion:

In conclusion, the STP11NM60N transistor from STMicroelectronics is a powerful and efficient component that plays a vital role in various applications within the power electronics field. Its high power handling capability, enhanced efficiency, robust construction, and built-in protection features make it a preferred choice for industrial systems, automotive electronics, power supplies, and motor drives. By leveraging the capabilities of the STP11NM60N transistor, engineers and designers can unlock new possibilities in power electronics, powering the technological advancements of tomorrow.


STP11NM60N

STP11NM60N

Part Number :
STP11NM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 10A TO220AB
Datasheet :
STP11NM60N.pdf
Unit Price :
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In Stock :
3530
Lead Time :
To be Confirmed
Quick Inquiry :
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    STP11NM60N Specifications

    Packaging:
    Tube
    Series:
    MDmesh™ II
    ProductStatus:
    Obsolete
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    600 V
    Current-ContinuousDrain(Id)@25°C:
    10A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    450mOhm @ 5A, 10V
    Vgs(th)(Max)@Id:
    4V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    31 nC @ 10 V
    Vgs(Max):
    ±25V
    InputCapacitance(Ciss)(Max)@Vds:
    850 pF @ 50 V
    FETFeature:
    -
    PowerDissipation(Max):
    90W (Tc)
    OperatingTemperature:
    150°C (TJ)
    MountingType:
    Through Hole

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