Understanding The STP11N65M5: A Comprehensive Guide To The High-Voltage N-Channel Power MOSFET
The STP11N65M5 is a high-voltage N-Channel power MOSFET that is commonly used in power electronics applications such as switching regulators, DC-DC converters, and motor control circuits. In this article, we will take a closer look at the STP11N65M5 and explore its key features, benefits, and applications.
Introduction
Power MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are a type of semiconductor device that are commonly used in power electronics applications where high current, high voltage, and high switching speed are required. The STP11N65M5 is a member of the STPOWER MOSFET family and is designed to meet the high-performance requirements of power electronics applications.
Key Features Of The STP11N65M5
The STP11N65M5 is a high-voltage N-channel MOSFET that is designed with the latest STripFET VII technology. It has a maximum drain-source voltage (VDS) rating of 650V, a continuous drain current (ID) of 10A, and a low on-resistance (RDS(on)) of 0.3 ohm at 10V gate-source voltage (VGS).
The STP11N65M5 also features a fast switching speed, which makes it suitable for high-frequency switching applications. It has a total gate charge (Qg) of 92nC and a gate-source voltage (VGS(th)) range of 2.5V to 4V, which allows for easy gate drive design.
Other key features of the STP11N65M5 include low gate charge (Qg), low input capacitance (Ciss), and low reverse recovery charge (Qrr), which contribute to its excellent electrical performance.
Benefits Of The STP11N65M5
The STP11N65M5 offers several benefits for power electronics designers, including:
High voltage rating: The STP11N65M5 is designed for high-voltage applications and can withstand up to 650V maximum drain-source voltage.
Low on-resistance: With an on-resistance of only 0.3 ohm, the STP11N65M5 is highly efficient and can help reduce power losses in power electronics circuits.
Fast switching speed: The STP11N65M5 has a fast switching speed, which makes it suitable for high-frequency switching applications.
Low gate charge and input capacitance: The low gate charge and input capacitance of the STP11N65M5 make it easy to drive and minimize switching losses.
Low reverse recovery charge: The low reverse recovery charge of the STP11N65M5 minimizes voltage transients and reduces electromagnetic interference (EMI).
Applications Of The STP11N65M5
The STP11N65M5 is suitable for a wide range of power electronics applications, including:
Switching regulators: The STP11N65M5 can be used in switching regulators to provide high-voltage switching capability.
DC-DC converters: The STP11N65M5 can be used in DC-DC converters to convert one voltage level to another.
Motor control circuits: The STP11N65M5 can be used in motor control circuits to control the speed and direction of DC motors.
Power factor correction: The STP11N65M5 can be used in power factor correction circuits to improve the efficiency of power supplies.
Conclusion
The STP11N65M5 is a high-performance N-channel MOSFET that offers a range of benefits for power electronics designers. With a high voltage rating, low on-resistance, fast switching speed, and low gate charge, the STP11N65M5 is well-suited for a wide range of power electronics applications. If you're looking for a reliable and efficient MOSFET for your next power electronics project, the STP11N65M5 is definitely worth considering.
STP11N65M5
- Part Number :
- STP11N65M5
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 650V 9A TO220
- Datasheet :
-
STP11N65M5.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3847
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
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STP11N65M5 Specifications
- Packaging:
- Tube
- Series:
- MDmesh™ V
- ProductStatus:
- Active
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 650 V
- Current-ContinuousDrain(Id)@25°C:
- 9A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 480mOhm @ 4.5A, 10V
- Vgs(th)(Max)@Id:
- 5V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 17 nC @ 10 V
- Vgs(Max):
- ±25V
- InputCapacitance(Ciss)(Max)@Vds:
- 644 pF @ 100 V
- FETFeature:
- -
- PowerDissipation(Max):
- 85W (Tc)
- OperatingTemperature:
- 150°C (TJ)
- MountingType:
- Through Hole
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