Understanding the STH360N4F6-2: A Comprehensive Guide
The STH360N4F6-2 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is designed to offer optimized efficiency and enhanced power density in various applications, including power management in servers, telecom systems, and other electronics. In this article, we'll delve deeper into the features, capabilities, and potential use cases of the STH360N4F6-2.
Features and Specifications
The STH360N4F6-2 is part of STMicroelectronics' SuperFET3 technology platform, which features an improved design with reduced switching and conduction losses. Here are some of the key features and specifications of the STH360N4F6-2:
Drain-source voltage (VDS): 40V
Continuous drain current (ID): 360A
Avalanche current (IAR): 720A
Maximum power dissipation (PD): 1040W
Low on-state resistance (RDS(on)): 1.15m? (typical)
Gate charge (QG): 400nC (typical)
In addition to these specifications, the STH360N4F6-2 also offers built-in protection features, such as overvoltage, overcurrent, and thermal shutdown. These protection mechanisms ensure that the MOSFET stays within safe operating limits and prevents damage to the device or surrounding components.
Applications
The STH360N4F6-2 is a versatile MOSFET that can be used in many different applications that require high efficiency and power density. Some of the potential applications include:
Server Power Management
The STH360N4F6-2 can be used in server power supplies to improve the overall efficiency and reduce power losses. With its low on-state resistance and high current handling capabilities, it can deliver high-power output with minimal voltage drop, reducing the overall power dissipation and improving the system's thermal performance.
Telecom Systems
The high current and power handling capabilities of the STH360N4F6-2 also make it suitable for use in telecom systems, such as base stations and network equipment. Its high efficiency and built-in protection features can help improve the reliability and performance of these systems, reducing downtime and maintenance costs.
Automotive Applications
The STH360N4F6-2 can also be used in automotive applications, such as DC-DC converters and motor control systems. Its low on-state resistance and high switching speeds make it ideal for high-current switching applications, such as motor and solenoid control.
Advantages and Limitations
Like any electronic component, the STH360N4F6-2 has its advantages and limitations. Here are a few key points to consider when using this MOSFET in your designs:
Advantages
High current and power handling capabilities
Low on-state resistance for improved efficiency
Built-in protection mechanisms for added safety
Suitable for a wide range of applications, including power management, telecom, and automotive
Limitations
High cost compared to other MOSFETs in its class
Risk of thermal runaway under certain operating conditions
Requires careful attention to thermal management to avoid damage or failure
Conclusion
The STH360N4F6-2 is a high-performance N-channel power MOSFET with a range of features and capabilities that make it well-suited for a variety of high-power applications. Its low on-state resistance, high current handling capabilities, and built-in protection mechanisms make it a reliable choice for power management in servers, telecom systems, and other electronics. However, it is important to keep in mind the potential limitations and risks, including thermal runaway and the need for careful thermal management. By understanding the capabilities and limitations of the STH360N4F6-2, designers can make informed decisions about how to best use this powerful MOSFET in their applications.
STH360N4F6-2
- Part Number :
- STH360N4F6-2
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 40V 180A H2PAK-2
- Datasheet :
-
STH360N4F6-2.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 919
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STH360N4F6-2 Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- DeepGATE™, STripFET™ VI
- ProductStatus:
- Obsolete
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 40 V
- Current-ContinuousDrain(Id)@25°C:
- 180A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 1.25mOhm @ 60A, 10V
- Vgs(th)(Max)@Id:
- 4.5V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 340 nC @ 10 V
- Vgs(Max):
- ±20V
- InputCapacitance(Ciss)(Max)@Vds:
- 17930 pF @ 25 V
- FETFeature:
- -
- PowerDissipation(Max):
- 300W (Tc)
- OperatingTemperature:
- -55°C ~ 175°C (TJ)
- MountingType:
- Surface Mount
STH360N4F6-2 Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Certified Quality
View the Certificates