Understanding the STGWT80H65DFB: A Comprehensive Guide


If you are on the lookout for a powerful semiconductor device, the STGWT80H65DFB is a great choice. Designed and produced by STMicroelectronics, it is a versatile product that is highly sought after by engineers and manufacturers.

In this article, we will take an in-depth look at the STGWT80H65DFB and explore its features, capabilities, and potential applications. By the end of this guide, you’ll have a solid understanding of what the device does, how it works, and how you can make the most out of it.

Introducing the STGWT80H65DFB

The STGWT80H65DFB is a silicon carbide (SiC) power MOSFET that belongs to the high-performance STPOWER family. It is designed to deliver efficient and reliable power conversion in a wide range of applications, including automotive, industrial, and consumer electronics.

What sets the STGWT80H65DFB apart from other MOSFETs is its advanced features and specifications. For instance, it has an ultra-low gate charge, which means it can switch rapidly and consume less power. It also has a low on-resistance, which results in lower losses and higher efficiency.

Features and Benefits

Let’s take a closer look at some of the key features and benefits of the STGWT80H65DFB:

High current capability: The device can handle currents up to 80A, making it suitable for high-power applications.

Low on-state resistance: The on-resistance is as low as 65mΩ, which reduces power losses and improves efficiency.

Fast switching speed: The STGWT80H65DFB has a switching time of just 10ns, allowing it to handle high-frequency applications with ease.

Low gate charge: The gate charge is as low as 170nC, which reduces the power required to drive the device.

Wide operating temperature range: The MOSFET can operate at temperatures ranging from -55°C to 175°C, making it suitable for harsh environments.

Together, these features make the STGWT80H65DFB an attractive option for manufacturers and engineers who need a high-performance MOSFET.

Potential Applications

The STGWT80H65DFB has a wide range of potential applications in various industries. Here are some of the areas where it can be used:

Automotive

In the automotive industry, the STGWT80H65DFB can be used in electric powertrains, battery chargers, and inverters. Its high current capability and efficiency make it ideal for electric and hybrid vehicles.

Industrial

In the industrial sector, the MOSFET can be used in motor drives, power supplies, and converters. Its fast switching speed and low losses make it a preferred choice for high-frequency applications.

Consumer Electronics

In the consumer electronics market, the STGWT80H65DFB can be used in high-end audio amplifiers, power adapters, and chargers. Its low on-state resistance and high efficiency make it suitable for portable devices that require extended battery life.

Key Features at a Glance

Here’s a summary of the key features of the STGWT80H65DFB:

Silicon carbide (SiC) MOSFET

Max current rating of 80A

On-resistance as low as 65mΩ

Switching time of 10ns

Low gate charge of 170nC

Wide operating temperature range (-55°C to 175°C)

Conclusion

The STGWT80H65DFB is a high-performance MOSFET that can deliver efficient and reliable power conversion in various applications. Its advanced features and specifications make it a popular choice for engineers and manufacturers who demand the best.

If you’re interested in using the STGWT80H65DFB in your products or projects, be sure to consult the datasheet and application notes from STMicroelectronics. With the right design and implementation, you can take advantage of the full potential of this impressive device.


STGWT80H65DFB

STGWT80H65DFB

Part Number :
STGWT80H65DFB
Manufacturer :
STMicroelectronics
Description :
IGBT 650V 120A 469W TO3P-3L
Datasheet :
STGWT80H65DFB.pdf
Unit Price :
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In Stock :
2714
Lead Time :
To be Confirmed
Quick Inquiry :
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    STGWT80H65DFB Specifications

    Packaging:
    Tube
    Series:
    -
    ProductStatus:
    Active
    IGBTType:
    Trench Field Stop
    Voltage-CollectorEmitterBreakdown(Max):
    650 V
    Current-Collector(Ic)(Max):
    120 A
    Current-CollectorPulsed(Icm):
    240 A
    Vce(on)(Max)@VgeIc:
    2V @ 15V, 80A
    Power-Max:
    469 W
    SwitchingEnergy:
    2.1mJ (on), 1.5mJ (off)
    InputType:
    Standard
    GateCharge:
    414 nC
    Td(on/off)@25°C:
    84ns/280ns
    TestCondition:
    400V, 80A, 10Ohm, 15V
    ReverseRecoveryTime(trr):
    85 ns
    OperatingTemperature:
    -55°C ~ 175°C (TJ)
    MountingType:
    Through Hole

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