The STGW60H65DF: An In-Depth Look at Its Features and Benefits:


The STGW60H65DF is a powerful, high-performance IGBT (Insulated Gate Bipolar Transistor) module that has been designed to meet the demanding requirements of modern power electronics applications. In this article, we'll take an in-depth look at the STGW60H65DF's key features, benefits, and specifications.

Features of the STGW60H65DF\

The STGW60H65DF is a 650V IGBT module that features the following:

High current rating of 60A

Low on-state voltage drop of 1.8V

Fast switching speed of 10ns

High short-circuit withstand capability of 10μs

Built-in soft recovery diode for reduced switching losses

Low thermal resistance of 0.33°C/W

One of the key features of the STGW60H65DF is its low on-state voltage drop, which helps to reduce power dissipation and increase overall system efficiency. Additionally, the module's fast switching speed and high short-circuit withstand capability make it ideal for use in high-power switching applications.

Benefits of the STGW60H65DF\

The STGW60H65DF offers a number of benefits that make it a popular choice for engineers and designers working in a wide range of applications, including:

High efficiency and low power dissipation

Improved reliability and ruggedness

Reduced electromagnetic interference (EMI)

Simplified circuit design and layout

Space-saving and cost-effective solution

The STGW60H65DF's high efficiency and low power dissipation make it an ideal choice for applications where energy efficiency is a top priority, such as solar inverters, motor drives, and uninterruptible power supplies (UPS). Additionally, the module's improved reliability and ruggedness help to ensure long-term system reliability and reduce the risk of system failures.

The STGW60H65DF also offers reduced electromagnetic interference (EMI) and simplified circuit design and layout, which can help to reduce system complexity and improve overall system performance. Finally, the module's space-saving and cost-effective design make it a popular choice for engineers and designers looking to reduce system costs and free up valuable board space.

Specifications of the STGW60H65DF\

The STGW60H65DF offers the following specifications:

Collector-emitter voltage (VCE): 650V

Collector current (IC): 60A

On-state voltage drop (VCE (sat)): 1.8V

Input capacitance (Cies): 12nF

Output capacitance (Coes): 60nF

Reverse transfer capacitance (Cres): 9nF

Short-circuit withstand time (tsc): 10μs

Operating temperature range: -40°C to +150°C

Overall, the STGW60H65DF is a powerful, reliable, and efficient IGBT module that offers a range of benefits for engineers and designers working in modern power electronics applications. With its high-performance features, low power dissipation, and space-saving design, the STGW60H65DF is a popular choice for a wide range of applications, including solar inverters, motor drives, and UPS systems. If you're looking for a high-performance IGBT module that delivers exceptional performance and reliability, the STGW60H65DF is definitely worth considering.


STGW60H65DF

STGW60H65DF

Part Number :
STGW60H65DF
Manufacturer :
STMicroelectronics
Description :
IGBT 650V 120A 360W TO247
Datasheet :
STGW60H65DF.pdf
Unit Price :
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In Stock :
3540
Lead Time :
To be Confirmed
Quick Inquiry :
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    STGW60H65DF Specifications

    Packaging:
    Tube
    Series:
    -
    ProductStatus:
    Obsolete
    IGBTType:
    Trench Field Stop
    Voltage-CollectorEmitterBreakdown(Max):
    650 V
    Current-Collector(Ic)(Max):
    120 A
    Current-CollectorPulsed(Icm):
    240 A
    Vce(on)(Max)@VgeIc:
    1.9V @ 15V, 60A
    Power-Max:
    360 W
    SwitchingEnergy:
    1.5mJ (on), 1.1mJ (off)
    InputType:
    Standard
    GateCharge:
    206 nC
    Td(on/off)@25°C:
    67ns/165ns
    TestCondition:
    400V, 60A, 10Ohm, 15V
    ReverseRecoveryTime(trr):
    62 ns
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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