Unleashing the Power of the STGH30H65DFB-2AG: A Comprehensive Guide
Are you looking for a powerful semiconductor device for your latest electronic project? Look no further than the STGH30H65DFB-2AG, a state-of-the-art component that boasts impressive specs and capabilities.
What is the STGH30H65DFB-2AG?
The STGH30H65DFB-2AG is a high voltage Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that operates at 650 volts and can handle a maximum current of 30 amps. It is designed for use in power electronics applications such as switch-mode power supplies, motor control circuits, and lighting systems.
One of the key features of this device is its low on-resistance (Rds ON), which means it is highly efficient at conducting electrical signals. Its gate charge (Qg) is also low, meaning it can switch quickly between on and off states, making it ideal for high-frequency applications.
Benefits of Using the STGH30H65DFB-2AG
There are numerous benefits to using the STGH30H65DFB-2AG in your next project, including:
High voltage capability: At 650 volts, this device can handle a wide range of voltage requirements.
Low on-resistance: The STGH30H65DFB-2AG's low Rds ON means less power is wasted as heat, making it a highly efficient component.
Quick switching: With a low gate charge, this device can quickly switch between on and off states, making it ideal for high-frequency applications.
Robust construction: The STGH30H65DFB-2AG is designed to withstand harsh operating conditions, including high temperatures and voltage spikes.
How to Implement the STGH30H65DFB-2AG
Integrating the STGH30H65DFB-2AG into your electronic project is relatively straightforward. Here are some tips to keep in mind:
Use a proper heat sink: As with any power MOSFET, the STGH30H65DFB-2AG can generate a significant amount of heat during operation. To prevent it from overheating, it's essential to use an adequate heat sink to dissipate the heat. Make sure to choose a heat sink that is appropriately sized for your application.
Follow recommended layout guidelines: When designing your PCB (Printed Circuit Board), it's important to follow the recommended layout guidelines provided by the manufacturer. This ensures that the STGH30H65DFB-2AG operates correctly and with maximum efficiency.
Implement proper safety measures: As with any high voltage device, it's crucial to implement proper safety measures when using the STGH30H65DFB-2AG. This includes insulation and isolation techniques to prevent electrical shock or damage to nearby components.
Conclusion
The STGH30H65DFB-2AG is an impressive semiconductor device that offers high voltage capability, low on-resistance, and quick switching. It's a robust component that can withstand harsh operating conditions, making it ideal for a wide range of power electronics applications. By following the tips outlined in this guide, you can successfully implement the STGH30H65DFB-2AG into your project and leverage its full potential.
STGH30H65DFB-2AG
- Part Number :
- STGH30H65DFB-2AG
- Manufacturer :
- STMicroelectronics
- Description :
- AUTOMOTIVE-GRADE TRENCH GATE FIE
- Datasheet :
-
STGH30H65DFB-2AG.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 2209
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STGH30H65DFB-2AG Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- Automotive, AEC-Q101
- ProductStatus:
- Active
- IGBTType:
- Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max):
- 650 V
- Current-Collector(Ic)(Max):
- 60 A
- Current-CollectorPulsed(Icm):
- 90 A
- Vce(on)(Max)@VgeIc:
- 2V @ 15V, 30A
- Power-Max:
- 260 W
- SwitchingEnergy:
- 555µJ (on), 300µJ (off)
- InputType:
- Standard
- GateCharge:
- 155 nC
- Td(on/off)@25°C:
- 24ns/170ns
- TestCondition:
- 400V, 30A, 10Ohm, 15V
- ReverseRecoveryTime(trr):
- 28 ns
- OperatingTemperature:
- -55°C ~ 175°C (TJ)
- MountingType:
- Surface Mount
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