STGD8NC60KDT4: A Comprehensive Review of the Power MOSFET


Introduction

In the world of electronic devices, power management is a critical aspect to consider. One key component that plays a crucial role in power management is the power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Among the various options available in the market, the STGD8NC60KDT4 stands out as an excellent choice. In this blog post, we will provide a comprehensive review of this power MOSFET, exploring its features, applications, advantages, and limitations.

1. Overview of STGD8NC60KDT4

The STGD8NC60KDT4 is a N-channel MOSFET designed specifically for high-voltage and high-speed applications. Manufactured by STMicroelectronics, this power MOSFET offers a range of exceptional features that make it a preferred choice for engineers and designers. These features include a low on-resistance, high switching speed, and excellent thermal performance.

2. Features and Specifications

The STGD8NC60KDT4 has a maximum drain-source voltage of 600V, making it suitable for a wide range of applications. It also offers a low on-resistance of 1.15 ohms, which results in reduced power dissipation and enhanced efficiency. With a gate charge of 34nC, it ensures fast and efficient switching. Additionally, this MOSFET has a gate-source voltage of +/- 20V and a continuous drain current of 8A.

3. Applications

The STGD8NC60KDT4 power MOSFET finds its application in numerous electronic devices and systems. Some notable applications include:

Switching power supplies: Due to its high switching speed and low on-resistance, the STGD8NC60KDT4 is widely used in the design of efficient and reliable switching power supplies for various consumer electronics and industrial applications.

Motor control: The MOSFET's ability to handle high-voltage and high-current requirements makes it well-suited for motor control applications. It is commonly used in motor drives, AC/DC converters, and variable speed drives.

Lighting systems: With its high voltage rating and low on-resistance, the STGD8NC60KDT4 is commonly used in LED lighting applications. It enables efficient power management and contributes to extending the lifespan of LED modules.

Industrial automation: The MOSFET's high voltage tolerance and fast switching speed make it suitable for applications in industrial automation systems. It is widely used in robotics, control systems, and programmable logic controllers (PLCs).

4. Advantages

The STGD8NC60KDT4 offers several advantages over other power MOSFETs in the market:

Low power dissipation: The low on-resistance of the MOSFET ensures reduced power dissipation during operation, resulting in improved efficiency and reduced heating.

Fast switching speed: With a gate charge of 34nC, this MOSFET enables fast switching, making it ideal for high-speed applications.

Enhanced thermal performance: The STGD8NC60KDT4 is designed to handle elevated temperatures, providing excellent thermal management. This feature ensures the MOSFET's reliability and longevity, even in demanding environments.

5. Limitations

While the STGD8NC60KDT4 offers several advantages, it is important to consider its limitations as well:

Maximum voltage limitations: The MOSFET has a maximum drain-source voltage of 600V. For applications that require higher voltage ratings, an alternative MOSFET would be more suitable.

Current limitations: The STGD8NC60KDT4 has a maximum continuous drain current of 8A. For applications that demand higher current handling capabilities, a MOSFET with a higher current rating may be required.

6. Conclusion

In conclusion, the STGD8NC60KDT4 power MOSFET from STMicroelectronics proves to be an excellent choice for high-voltage and high-speed applications. Its low on-resistance, fast switching speed, and exceptional thermal performance make it a reliable solution for various applications in power management, motor control, lighting systems, and industrial automation. While it does have limitations in terms of maximum voltage and current ratings, it remains a top contender in its category. Engineers and designers seeking an efficient and reliable power MOSFET should consider the STGD8NC60KDT4 for their next project.


STGD8NC60KDT4

STGD8NC60KDT4

Part Number :
STGD8NC60KDT4
Manufacturer :
STMicroelectronics
Description :
IGBT 600V 15A 62W DPAK
Datasheet :
STGD8NC60KDT4.pdf
Unit Price :
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In Stock :
2414
Lead Time :
To be Confirmed
Quick Inquiry :
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    STGD8NC60KDT4 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    PowerMESH™
    ProductStatus:
    Active
    IGBTType:
    -
    Voltage-CollectorEmitterBreakdown(Max):
    600 V
    Current-Collector(Ic)(Max):
    15 A
    Current-CollectorPulsed(Icm):
    30 A
    Vce(on)(Max)@VgeIc:
    2.75V @ 15V, 3A
    Power-Max:
    62 W
    SwitchingEnergy:
    55µJ (on), 85µJ (off)
    InputType:
    Standard
    GateCharge:
    19 nC
    Td(on/off)@25°C:
    17ns/72ns
    TestCondition:
    390V, 3A, 10Ohm, 15V
    ReverseRecoveryTime(trr):
    23.5 ns
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Surface Mount

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