STGD19N40LZ Explained: Features and Applications


Are you looking for a power device that can withstand high voltage and deliver unmatched performance? Meet STGD19N40LZ, a N-channel Power MOSFET from STMicroelectronics. This power device is designed for high-speed switching applications that require low gate-drive power, low on-state resistance, and fast reverse recovery time. In this article, we will explore the features and applications of STGD19N40LZ.

Features of STGD19N40LZ

STGD19N40LZ is a member of the MDmesh? K5 family, a new generation of fast-recovery diode-based MOSFETs from STMicroelectronics. This family of power MOSFETs is designed for high-efficiency power conversion applications that require minimal power losses and high reliability. Here are some of the notable features of STGD19N40LZ:

High voltage rating: STGD19N40LZ can handle a maximum voltage of 400V, making it suitable for a wide range of power applications.

Low on-state resistance: The MOSFET has a maximum on-state resistance of 170m?, which reduces conduction losses and improves efficiency.

Fast recovery: STGD19N40LZ has a fast reverse recovery time of 95ns, which reduces switching losses and improves efficiency.

Low gate charge: The MOSFET has a maximum gate charge of 27nC, which reduces the switching time and the power required to switch the device on and off.

Avalanche ruggedness: STGD19N40LZ is designed to withstand high energy pulses and has a maximum avalanche energy rating of 180mJ.

Applications of STGD19N40LZ

STGD19N40LZ is suitable for a wide range of power applications that require high efficiency, high speed, and high reliability. Here are some of the applications of STGD19N40LZ:

Switching power supplies: STGD19N40LZ can be used as a switching element in high-frequency power supplies that require low power losses and high efficiency.

Motor control: The MOSFET can be used to drive motors in a wide range of applications, including industrial automation, robotics, and electric vehicles.

Lighting: STGD19N40LZ can be used in LED lighting applications to provide high current switching and efficient power conversion.

Solar inverters: The MOSFET can be used in solar inverters to provide high voltage switching and efficient power conversion in photovoltaic systems.

Conclusion

STGD19N40LZ is a high-performance power MOSFET that offers high efficiency, high speed, and high reliability. With its low on-state resistance, fast recovery time, low gate charge, and avalanche ruggedness, STGD19N40LZ is suitable for a wide range of power applications that require minimal power losses and high reliability. Whether you are designing a switching power supply, a motor control circuit, a lighting system, or a solar inverter, STGD19N40LZ is a reliable and efficient power device that can help you meet your design specifications.


STGD19N40LZ

STGD19N40LZ

Part Number :
STGD19N40LZ
Manufacturer :
STMicroelectronics
Description :
IGBT 20V 40A DPAK
Datasheet :
STGD19N40LZ.pdf
Unit Price :
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In Stock :
3317
Lead Time :
To be Confirmed
Quick Inquiry :
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    STGD19N40LZ Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    Automotive, AEC-Q101
    ProductStatus:
    Active
    IGBTType:
    -
    Voltage-CollectorEmitterBreakdown(Max):
    390 V
    Current-Collector(Ic)(Max):
    25 A
    Current-CollectorPulsed(Icm):
    40 A
    Vce(on)(Max)@VgeIc:
    1.5V @ 4.5V, 10A
    Power-Max:
    125 W
    SwitchingEnergy:
    -
    InputType:
    Logic
    GateCharge:
    17 nC
    Td(on/off)@25°C:
    650ns/13.5µs
    TestCondition:
    300V, 10A, 1kOhm, 5V
    ReverseRecoveryTime(trr):
    -
    OperatingTemperature:
    -55°C ~ 175°C (TJ)
    MountingType:
    Surface Mount

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