STGD19N40LZ Explained: Features and Applications
Are you looking for a power device that can withstand high voltage and deliver unmatched performance? Meet STGD19N40LZ, a N-channel Power MOSFET from STMicroelectronics. This power device is designed for high-speed switching applications that require low gate-drive power, low on-state resistance, and fast reverse recovery time. In this article, we will explore the features and applications of STGD19N40LZ.
Features of STGD19N40LZ
STGD19N40LZ is a member of the MDmesh? K5 family, a new generation of fast-recovery diode-based MOSFETs from STMicroelectronics. This family of power MOSFETs is designed for high-efficiency power conversion applications that require minimal power losses and high reliability. Here are some of the notable features of STGD19N40LZ:
High voltage rating: STGD19N40LZ can handle a maximum voltage of 400V, making it suitable for a wide range of power applications.
Low on-state resistance: The MOSFET has a maximum on-state resistance of 170m?, which reduces conduction losses and improves efficiency.
Fast recovery: STGD19N40LZ has a fast reverse recovery time of 95ns, which reduces switching losses and improves efficiency.
Low gate charge: The MOSFET has a maximum gate charge of 27nC, which reduces the switching time and the power required to switch the device on and off.
Avalanche ruggedness: STGD19N40LZ is designed to withstand high energy pulses and has a maximum avalanche energy rating of 180mJ.
Applications of STGD19N40LZ
STGD19N40LZ is suitable for a wide range of power applications that require high efficiency, high speed, and high reliability. Here are some of the applications of STGD19N40LZ:
Switching power supplies: STGD19N40LZ can be used as a switching element in high-frequency power supplies that require low power losses and high efficiency.
Motor control: The MOSFET can be used to drive motors in a wide range of applications, including industrial automation, robotics, and electric vehicles.
Lighting: STGD19N40LZ can be used in LED lighting applications to provide high current switching and efficient power conversion.
Solar inverters: The MOSFET can be used in solar inverters to provide high voltage switching and efficient power conversion in photovoltaic systems.
Conclusion
STGD19N40LZ is a high-performance power MOSFET that offers high efficiency, high speed, and high reliability. With its low on-state resistance, fast recovery time, low gate charge, and avalanche ruggedness, STGD19N40LZ is suitable for a wide range of power applications that require minimal power losses and high reliability. Whether you are designing a switching power supply, a motor control circuit, a lighting system, or a solar inverter, STGD19N40LZ is a reliable and efficient power device that can help you meet your design specifications.
STGD19N40LZ
- Part Number :
- STGD19N40LZ
- Manufacturer :
- STMicroelectronics
- Description :
- IGBT 20V 40A DPAK
- Datasheet :
-
STGD19N40LZ.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3317
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STGD19N40LZ Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- Automotive, AEC-Q101
- ProductStatus:
- Active
- IGBTType:
- -
- Voltage-CollectorEmitterBreakdown(Max):
- 390 V
- Current-Collector(Ic)(Max):
- 25 A
- Current-CollectorPulsed(Icm):
- 40 A
- Vce(on)(Max)@VgeIc:
- 1.5V @ 4.5V, 10A
- Power-Max:
- 125 W
- SwitchingEnergy:
- -
- InputType:
- Logic
- GateCharge:
- 17 nC
- Td(on/off)@25°C:
- 650ns/13.5µs
- TestCondition:
- 300V, 10A, 1kOhm, 5V
- ReverseRecoveryTime(trr):
- -
- OperatingTemperature:
- -55°C ~ 175°C (TJ)
- MountingType:
- Surface Mount
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