Exploring the STGB30M65DF2: A Powerful Automotive MOSFET
Introduction:\
The automotive industry is constantly evolving, with a rising demand for more efficient and reliable electronic components. In order to meet these demands, semiconductor manufacturers are developing innovative solutions. One such example is the STGB30M65DF2, a high-performance MOSFET specifically designed for automotive applications. In this blog post, we will delve into the features and benefits of the STGB30M65DF2 and discuss its potential impact on the automotive industry.
Overview of the STGB30M65DF2:\
The STGB30M65DF2 is a silicon carbide (SiC) power MOSFET that operates at high voltage and current levels. This device is built using the latest generation of SiC technology, making it highly efficient and capable of handling large amounts of power. It features a low on-resistance and fast switching capabilities, making it suitable for various automotive applications such as powertrain systems, battery management, motor control, and more.
Benefits of the STGB30M65DF2:
1. Improved Efficiency: One of the primary advantages of the STGB30M65DF2 is its higher efficiency compared to traditional silicon-based MOSFETs. The SiC technology used in the device enables lower switching losses, which in turn reduces power dissipation and improves overall system efficiency. This efficiency improvement translates to reduced energy consumption and longer battery life in electric and hybrid vehicles.
2. Higher Power Density: The STGB30M65DF2 offers a higher power density than conventional MOSFETs. This means that it can handle higher power levels while occupying a smaller physical footprint. This is particularly beneficial in automotive systems where space is limited, allowing for more compact and lightweight designs.
3. Enhanced Reliability: The superior material properties of silicon carbide make the STGB30M65DF2 highly durable and reliable. It is capable of withstanding high temperatures, voltage spikes, and electrical stresses commonly encountered in automotive environments. This reliability ensures long-term performance and reduces the risk of component failure, thereby enhancing the overall safety of the vehicle.
4. Faster Switching Speeds: The STGB30M65DF2 exhibits ultra-fast switching speeds, enabling quicker response times in automotive applications such as motor control. This fast switching minimizes power losses during switching transitions, leading to improved response times, reduced heat generation, and more precise control of the system.
Applications of the STGB30M65DF2:\
The STGB30M65DF2 is designed specifically for automotive applications that demand high-power switching capabilities. Some of its key applications include:
1. Electric and Hybrid Vehicles: As the demand for eco-friendly transportation solutions continues to grow, electric and hybrid vehicles require advanced power electronic systems. The STGB30M65DF2 can be used in electric vehicle powertrains, battery management systems, onboard chargers, and DC-DC converters to improve efficiency and reliability.
2. Motor Control: Efficient motor control is essential in various automotive systems such as electric power steering, HVAC (heating, ventilation, and air conditioning), and engine cooling fans. The STGB30M65DF2's fast switching speed and low power losses make it an ideal choice for motor control applications, ensuring optimal performance and energy efficiency.
3. Power Distribution: The STGB30M65DF2 can be utilized in power distribution units, where it enables efficient and reliable power transfer from the battery to different subsystems within the vehicle. Its high power density and low on-resistance minimize energy losses, allowing for efficient power distribution across the vehicle's electrical systems.
Conclusion:\
The STGB30M65DF2 is a breakthrough automotive MOSFET that offers significant advantages over traditional silicon-based devices. Its high efficiency, improved power density, enhanced reliability, and fast switching speeds make it a compelling option for various automotive applications. With the continuous advancements in semiconductor technology, the STGB30M65DF2 showcases the potential of SiC-based power devices in revolutionizing the automotive industry. By adopting this innovative MOSFET in automotive systems, manufacturers can achieve higher efficiency, better performance, and contribute to the ongoing evolution towards electric and hybrid vehicles.
STGB30M65DF2
- Part Number :
- STGB30M65DF2
- Manufacturer :
- STMicroelectronics
- Description :
- IGBT 650V 30A D2PAK
- Datasheet :
-
STGB30M65DF2.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 2002
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
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STGB30M65DF2 Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- -
- ProductStatus:
- Active
- IGBTType:
- Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max):
- 650 V
- Current-Collector(Ic)(Max):
- 60 A
- Current-CollectorPulsed(Icm):
- 120 A
- Vce(on)(Max)@VgeIc:
- 2V @ 15V, 30A
- Power-Max:
- 258 W
- SwitchingEnergy:
- 300µJ (on), 960µJ (off)
- InputType:
- Standard
- GateCharge:
- 80 nC
- Td(on/off)@25°C:
- 31.6ns/115ns
- TestCondition:
- 400V, 30A, 10Ohm, 15V
- ReverseRecoveryTime(trr):
- 140 ns
- OperatingTemperature:
- -55°C ~ 175°C (TJ)
- MountingType:
- Surface Mount
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