STGB30H65DFB2: Unleashing the Power of Advanced Semiconductor Technology


Introduction:

In the fast-paced world of technological advancements, semiconductors play a pivotal role in transforming our lives. These tiny electronic components are the foundation of countless devices that we rely on every day, from smartphones to electric vehicles. One such remarkable semiconductor is the STGB30H65DFB2, which offers unparalleled performance and efficiency. In this blog post, we will dive deep into understanding the key features, applications, and potential impact of the STGB30H65DFB2.

Overview of the STGB30H65DFB2:

The STGB30H65DFB2 is a cutting-edge semiconductor that belongs to the IGBT (Insulated Gate Bipolar Transistor) family. With its high voltage rating and low-loss characteristics, it is designed to deliver optimal performance in various applications, particularly in power electronics. The exceptional features of the STGB30H65DFB2 make it a preferred choice for energy-efficient and high-power systems.

Key Features:

1. High Voltage Rating: The STGB30H65DFB2 offers a high blocking voltage, allowing it to handle substantial power levels. This capability makes it suitable for applications that require high-voltage switching.

2. Low Conduction Losses: The low conduction losses of the STGB30H65DFB2 result in improved efficiency and reduced power dissipation. This makes it an ideal solution for energy-sensitive applications, such as renewable energy systems.

3. Fast Switching Speed: With its fast turn-on and turn-off times, the STGB30H65DFB2 enables efficient power conversion and minimizes switching losses. This characteristic is crucial in high-frequency applications where rapid switching is required.

4. Temperature Stability: The STGB30H65DFB2 is designed to withstand high-temperature environments, ensuring reliable operation even under challenging conditions. This feature makes it suitable for demanding applications that require robust performance.

Applications:

The STGB30H65DFB2 finds applications in a wide range of industries, contributing to advancements and innovations in various sectors. Some notable applications include:

1. Industrial Automation: The STGB30H65DFB2 is utilized in advanced robotics, motor control systems, and industrial equipment. Its high power handling capability and low losses make it an excellent choice for efficient and reliable automation solutions.

2. Electric Vehicles: With the global shift towards sustainable transportation, the demand for electric vehicles (EVs) has risen significantly. The STGB30H65DFB2 plays a vital role in EV powertrains by enabling efficient motor control and power conversion.

3. Renewable Energy: The STGB30H65DFB2 is well-suited for renewable energy systems, such as solar and wind power inverters. Its high voltage rating and temperature stability ensure optimal performance in converting renewable energy into usable electricity.

4. Power Supplies: The STGB30H65DFB2 is widely used in various power supply applications, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low conduction losses and fast switching speed enhance the efficiency and reliability of these systems.

Impact and Future Perspectives:

The STGB30H65DFB2 represents the next generation of semiconductor technology, revolutionizing the power electronics industry. Its advanced features and capabilities have the potential to drive significant improvements in energy efficiency, reliability, and performance across various sectors.

As technology continues to evolve, we can anticipate further enhancements in semiconductor design and manufacturing processes. This will likely result in even more powerful and efficient devices in the future, further accelerating the adoption of sustainable energy solutions and powering the digital transformation.

In conclusion:

The STGB30H65DFB2 is a remarkable semiconductor that embodies the latest advancements in technology. Its high voltage rating, low losses, and fast switching speed make it an ideal choice for power electronics applications. Whether in industrial automation, electric vehicles, renewable energy, or power supplies, the STGB30H65DFB2 plays a crucial role in driving efficiency and performance. As we continue to embrace the power of semiconductor technology, the STGB30H65DFB2 represents a milestone in the pursuit of sustainable and interconnected systems that will shape our future.


STGB30H65DFB2

STGB30H65DFB2

Part Number :
STGB30H65DFB2
Manufacturer :
STMicroelectronics
Description :
TRENCH GATE FIELD-STOP 650 V, 30
Datasheet :
STGB30H65DFB2.pdf
Unit Price :
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In Stock :
3261
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # STGB30H65DFB2 is manufactured by STMicroelectronics and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For STGB30H65DFB2 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STGB30H65DFB2 with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of STGB30H65DFB2. Buy the STGB30H65DFB2 STMicroelectronics on Worldictown . com,we are STMicroelectronics Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the STGB30H65DFB2 within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    STGB30H65DFB2 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    HB2
    ProductStatus:
    Active
    IGBTType:
    Trench Field Stop
    Voltage-CollectorEmitterBreakdown(Max):
    650 V
    Current-Collector(Ic)(Max):
    50 A
    Current-CollectorPulsed(Icm):
    90 A
    Vce(on)(Max)@VgeIc:
    2.1V @ 15V, 30A
    Power-Max:
    167 W
    SwitchingEnergy:
    270µJ (on), 310µJ (off)
    InputType:
    Standard
    GateCharge:
    90 nC
    Td(on/off)@25°C:
    18.4ns/71ns
    TestCondition:
    400V, 30A, 6.8Ohm, 15V
    ReverseRecoveryTime(trr):
    115 ns
    OperatingTemperature:
    -55°C ~ 175°C (TJ)
    MountingType:
    Surface Mount

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