STB21NM50N-1: Understanding Its Importance in Power Conversion
STB21NM50N-1: Understanding Its Importance in Power Conversion
STB21NM50N-1 is a high voltage power MOSFET manufactured by STMicroelectronics. It is known for its superior performance and reliability in high voltage power conversion applications. In this blog post, we will explore the features, advantages, and applications of STB21NM50N-1.
Features of STB21NM50N-1:
STB21NM50N-1 has a breakdown voltage of 500V and a maximum continuous drain current of 21A. This makes it suitable for use in high power switching applications.
The power MOSFET also has a low on-resistance of 0.23 ?, which ensures less power is dissipated as heat during operation, leading to power efficiency.
Advantages of STB21NM50N-1:
1. High-Voltage Capability: STB21NM50N-1 can handle high voltage up to 500V, making it suitable for a wide range of applications.
2. Low On-Resistance: It is essential to minimize the power losses in a power conversion circuit. The low on-resistance of STB21NM50N-1 ensures less power is dissipated, leading to improved efficiency.
3. Reliable and Consistent Performance: STMicroelectronics is known for producing quality electronic components that are reliable and consistent in performance. STB21NM50N-1 is no exception.
Applications of STB21NM50N-1:
1. Power Supplies: STB21NM50N-1 can be used in power supply applications, where it is essential to regulate the output voltage according to input voltage levels.
2. Motor Control: The high voltage capability of the MOSFET makes it suitable for use in motor control applications, where it can handle the high voltage and power requirements of the motor.
3. Inverters: STB21NM50N-1 can be used in inverters, which convert DC power from a battery to AC power that can be used to power homes or other appliances.
Conclusion:
STB21NM50N-1 is an important component in power conversion applications. Its high voltage capability, low on-resistance, and reliable performance make it suitable for various applications. Its efficiency and capability make it an essential component for designers in the power electronics industry. STB21NM50N-1 is definitely worth considering in various applications where high power handling and conversion efficiency are required.
STB21NM50N-1
- Part Number :
- STB21NM50N-1
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 500V 18A I2PAK
- Datasheet :
-
STB21NM50N-1.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3797
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STB21NM50N-1 Specifications
- Packaging:
- Tube
- Series:
- MDmesh™ II
- ProductStatus:
- Obsolete
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 500 V
- Current-ContinuousDrain(Id)@25°C:
- 18A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 190mOhm @ 9A, 10V
- Vgs(th)(Max)@Id:
- 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 65 nC @ 10 V
- Vgs(Max):
- ±25V
- InputCapacitance(Ciss)(Max)@Vds:
- 1950 pF @ 25 V
- FETFeature:
- -
- PowerDissipation(Max):
- 140W (Tc)
- OperatingTemperature:
- 150°C (TJ)
- MountingType:
- Through Hole
STB21NM50N-1 Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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