The STB13NM50N Transistor: Powering the Future of Electronics
Introduction:\
In today's rapidly advancing world of electronics, the need for efficient and powerful transistors is more important than ever. One such promising component is the STB13NM50N transistor. In this blog post, we will explore the capabilities and potential applications of the STB13NM50N transistor, and how it is set to revolutionize the field of electronics.
1. Understanding the STB13NM50N Transistor:\
The STB13NM50N is a power MOSFET transistor developed by STMicroelectronics. It is part of the MDmesh? M5 series, which offers high efficiency and low power dissipation. This transistor has a voltage rating of 500V and a current rating of 13A, making it a suitable choice for a wide range of electronic devices.
2. Improved Performance:\
The STB13NM50N transistor boasts several features that contribute to its superior performance. It has a very low on-resistance (RDS(on)) of 0.23Ω, enabling efficient power transfer and minimizing energy losses. Additionally, it has a fast switching speed, allowing for quick and responsive operation in various applications.
3. Applications in Power Electronics:\
The STB13NM50N transistor finds extensive applications in power electronics. One key area is power supplies, where it is used to regulate voltage and convert AC to DC power. Its low on-resistance ensures minimal power loss, resulting in higher efficiency and reduced heat dissipation. The transistor's high voltage rating makes it suitable for handling high-power applications.
4. Automotive Applications:\
The STB13NM50N transistor also finds use in the automotive industry. With the increasing shift towards electric vehicles, efficient power management is of paramount importance. The transistor's ability to handle high currents and voltages makes it ideal for electric vehicle propulsion systems, battery management, and onboard chargers.
5. Industrial Automation:\
Industrial automation is another field where the STB13NM50N transistor plays a significant role. From motor control to robotics, its high power handling capability and fast switching speed allow for precise and efficient control of industrial processes. The transistor's ability to operate in harsh environments, coupled with its low power dissipation, ensures reliable performance in demanding industrial applications.
6. Energy Efficiency and Sustainability:\
The need for energy efficiency and sustainability has never been greater. The STB13NM50N transistor contributes to these goals by enabling more efficient power conversion and minimizing energy wastage. Its low on-resistance results in reduced power losses, while its fast switching speed allows for enhanced energy management.
7. Integration and Future Developments:\
As technology continues to advance, the integration and miniaturization of electronic components become crucial. The STB13NM50N transistor is designed with this in mind, with advancements focused on reducing its footprint and optimizing its performance. Integration with other components and the development of advanced packaging techniques are expected to further enhance the transistor's capabilities.
8. Conclusion:\
The STB13NM50N transistor presents a leap forward in power electronics, enabling higher efficiency, improved performance, and sustainable energy consumption. With its low on-resistance, high voltage rating, and fast switching speed, it finds applications in power supplies, automotive systems, industrial automation, and more. As technology evolves, we can expect further advancements and integration to drive the future of electronics and power management.
In this blog post, we have explored the features and potential applications of the STB13NM50N transistor. Its ability to deliver efficient power management and contribute to sustainable energy practices makes it a promising component for the future of electronics. Whether it's in powering electric vehicles or enhancing industrial processes, the STB13NM50N transistor is set to play a crucial role in shaping the world of electronics.
STB13NM50N
- Part Number :
- STB13NM50N
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 500V 12A D2PAK
- Datasheet :
-
STB13NM50N.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3243
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
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STB13NM50N Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- MDmesh™ II
- ProductStatus:
- Obsolete
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 500 V
- Current-ContinuousDrain(Id)@25°C:
- 12A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 320mOhm @ 6A, 10V
- Vgs(th)(Max)@Id:
- 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 30 nC @ 10 V
- Vgs(Max):
- ±25V
- InputCapacitance(Ciss)(Max)@Vds:
- 960 pF @ 50 V
- FETFeature:
- -
- PowerDissipation(Max):
- 100W (Tc)
- OperatingTemperature:
- 150°C (TJ)
- MountingType:
- Surface Mount
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