TW048N65C,S1F
- Part Number :
- TW048N65C,S1F
- Manufacturer :
- Toshiba Semiconductor and Storage
- Description :
- G3 650V SIC-MOSFET TO-247 48MOH
- Datasheet :
-
TW048N65C,S1F.pdf
- Category :
- Transistors - FETs, MOSFETs - Single
- Unit Price :
- Request a Quote
- In Stock :
- 2174
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
Part Number # TW048N65C,S1F (Transistors - FETs, MOSFETs - Single) is manufactured by Toshiba Semiconductor and Storage and distributed by Worldictown . com.
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Their quality is guaranteed by its stringent quality control to meet all required standards.For TW048N65C,S1F specifications/configurations,
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Buy the TW048N65C,S1F Toshiba Semiconductor and Storage on Worldictown . com,we are Toshiba Semiconductor and Storage Corporation distributor,
we sales new&original and offer 24 hours service,90 days warranty date, send the TW048N65C,S1F within 24 hours,please contact our sales team or send email to
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TW048N65C,S1F Specifications
- Packaging:
- Tube
- Series:
- -
- ProductStatus:
- Active
- FETType:
- N-Channel
- Technology:
- SiC (Silicon Carbide Junction Transistor)
- DraintoSourceVoltage(Vdss):
- 650 V
- Current-ContinuousDrain(Id)@25°C:
- 40A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 18V
- RdsOn(Max)@IdVgs:
- 65mOhm @ 20A, 18V
- Vgs(th)(Max)@Id:
- 5V @ 1.6mA
- GateCharge(Qg)(Max)@Vgs:
- 41 nC @ 18 V
- Vgs(Max):
- +25V, -10V
- InputCapacitance(Ciss)(Max)@Vds:
- 1362 pF @ 400 V
- FETFeature:
- -
- PowerDissipation(Max):
- 132W (Tc)
- OperatingTemperature:
- 175°C
- MountingType:
- Through Hole
TW048N65C,S1F Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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