SCTW35N65G2VAG

SCTW35N65G2VAG

Part Number :
SCTW35N65G2VAG
Manufacturer :
STMicroelectronics
Description :
SICFET N-CH 650V 45A HIP247
Datasheet :
SCTW35N65G2VAG.pdf
Category :
Transistors - FETs, MOSFETs - Single
Unit Price :
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In Stock :
2641
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # SCTW35N65G2VAG (Transistors - FETs, MOSFETs - Single) is manufactured by STMicroelectronics and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For SCTW35N65G2VAG specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SCTW35N65G2VAG with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of SCTW35N65G2VAG. Buy the SCTW35N65G2VAG STMicroelectronics on Worldictown . com,we are STMicroelectronics Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the SCTW35N65G2VAG within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    SCTW35N65G2VAG Specifications

    Packaging:
    Tube
    Series:
    Automotive, AEC-Q101
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    SiCFET (Silicon Carbide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    45A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    18V, 20V
    RdsOn(Max)@IdVgs:
    67mOhm @ 20A, 20V
    Vgs(th)(Max)@Id:
    5V @ 1mA
    GateCharge(Qg)(Max)@Vgs:
    73 nC @ 20 V
    Vgs(Max):
    +22V, -10V
    InputCapacitance(Ciss)(Max)@Vds:
    1370 pF @ 400 V
    FETFeature:
    -
    PowerDissipation(Max):
    240W (Tc)
    OperatingTemperature:
    -55°C ~ 200°C (TJ)
    MountingType:
    Through Hole

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