GC11N65F

GC11N65F

Part Number :
GC11N65F
Manufacturer :
Goford Semiconductor
Description :
N650V,RD(MAX)<360M@10V,VTH2.5V~4
Datasheet :
GC11N65F.pdf
Category :
Transistors - FETs, MOSFETs - Single
Unit Price :
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In Stock :
3284
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # GC11N65F (Transistors - FETs, MOSFETs - Single) is manufactured by Goford Semiconductor and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For GC11N65F specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add GC11N65F with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of GC11N65F. Buy the GC11N65F Goford Semiconductor on Worldictown . com,we are Goford Semiconductor Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the GC11N65F within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    GC11N65F Specifications

    Packaging:
    Tube
    Series:
    -
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    11A
    DriveVoltage(MaxRdsOnMinRdsOn):
    -
    RdsOn(Max)@IdVgs:
    360mOhm @ 5.5A, 10V
    Vgs(th)(Max)@Id:
    4V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    21 nC @ 10 V
    Vgs(Max):
    ±30V
    InputCapacitance(Ciss)(Max)@Vds:
    901 pF @ 50 V
    FETFeature:
    -
    PowerDissipation(Max):
    31.3W
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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    We provide 90 days warranty.

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