DMG3N60SJ3

DMG3N60SJ3

Part Number :
DMG3N60SJ3
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 650V 2.8A TO251
Datasheet :
DMG3N60SJ3.pdf
Category :
Transistors - FETs, MOSFETs - Single
Unit Price :
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In Stock :
2317
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # DMG3N60SJ3 (Transistors - FETs, MOSFETs - Single) is manufactured by Diodes Incorporated and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For DMG3N60SJ3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add DMG3N60SJ3 with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of DMG3N60SJ3. Buy the DMG3N60SJ3 Diodes Incorporated on Worldictown . com,we are Diodes Incorporated Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the DMG3N60SJ3 within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    DMG3N60SJ3 Specifications

    Packaging:
    Tube
    Series:
    Automotive, AEC-Q101
    ProductStatus:
    Obsolete
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    2.8A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    3.5Ohm @ 1.5A, 10V
    Vgs(th)(Max)@Id:
    4V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    12.6 nC @ 10 V
    Vgs(Max):
    ±30V
    InputCapacitance(Ciss)(Max)@Vds:
    354 pF @ 25 V
    FETFeature:
    -
    PowerDissipation(Max):
    41W (Tc)
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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    We provide 90 days warranty.

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