Understanding the STU5N70M6-S transistor: specifications, features, and applications


The STU5N70M6-S is a high voltage, N-channel Power MOSFET transistor designed for high frequency applications in power conversion and motor control circuits. In this blog post, we will explore its main specifications, features, and applications, and provide some practical tips for using and selecting this component.

Specifications

The STU5N70M6-S transistor is part of the STMicroelectronics MDmesh M6 series, which is optimized for high efficiency and low electromagnetic interference (EMI) in switch-mode power supplies, LED drivers, and other industrial, consumer, and automotive applications. Its main electrical characteristics are:

Drain-source voltage (VDS): 700 V

Drain current (ID): 5 A

On-state resistance (RDS(on)): 2.2 ohm

Gate threshold voltage (VGS(th)): 3 V

Total gate charge (Qg): 30 nC

Input capacitance (Ciss): 350 pF

Output capacitance (Coss): 40 pF

Reverse transfer capacitance (Crss): 23 pF

Operating temperature range (Tj): -55 to +175 °C

These values determine how the transistor behaves in different conditions and environments, and affect its performance, reliability, and cost. For example, a transistor with a higher VDS can handle higher voltages without breakdown, but may also have a higher RDS(on) and Qg, which increase its losses and switching time. Similarly, a transistor with a lower VGS(th) can turn on more easily, but also consumes more gate drive power and generates more EMI.

Features

The STU5N70M6-S transistor has several features that make it suitable for various power applications:

Very low gate charge and input/output capacitance, which reduce switching losses and improve efficiency.

Fast diode recovery thanks to a low intrinsic capacitance, which reduces EMI and improves reliability.

Available in a DPAK package for easy mounting and low thermal resistance.

Compliant to RoHS and halogen-free regulations for environmental and health safety.

Additionally, the STU5N70M6-S transistor has a single pulse Avalanche energy rating (EAS) of 100 mJ, which means it can withstand a short duration energy pulse without damage. This is useful in applications where the transistor is exposed to transient voltage spikes or current surges, such as motor drives, welding machines, and power supplies.

Applications

The STU5N70M6-S transistor can be used in various power applications where high voltage, high frequency, and low losses are required, such as:

AC-DC and DC-DC converters

Half-bridge and full-bridge inverters

Motor drives and inverters

Switch-mode power supplies (SMPS)

LED drivers

Audio amplifiers

In these applications, the transistor can perform different functions depending on its position and configuration in the circuit. For example, in an SMPS, it can be used as a synchronous rectifier, a primary switch, or a secondary side switch, depending on the topology and power level. In a motor drive, it can be used as a high-side or low-side switch, depending on the layout and control strategy.

Tips for using and selecting

To use and select the STU5N70M6-S transistor effectively, you can follow these tips:

Choose the right package and footprint for your PCB design, according to your layout and thermal requirements. The DPAK package is suitable for low to medium power applications, while higher power applications may require other packages like TO-220 or D2PAK.

Verify the maximum voltage, current, and power ratings of your application, and make sure they do not exceed the limits of the transistor. Use thermal simulations and calculations to estimate the junction temperature, and ensure it stays below the maximum allowed value.

Pay attention to the gate drive requirements, especially the voltage and current ratings of the driver. Make sure they are compatible with the transistor's VGS(th) and Qg, and consider using gate drivers with built-in protection features like overcurrent and overvoltage clamping.

Optimize the layout and routing of your PCB to minimize parasitic inductance and capacitance, and reduce the switching losses and EMI. Use ground planes and decoupling capacitors to filter out noise and stabilize the power supply.

Test and validate your circuit thoroughly before deploying it, and measure the key parameters like efficiency, power dissipation, and EMI. Use oscilloscopes, spectrum analyzers, and power analyzers to analyze the waveforms and spectrum, and compare them with the datasheet and design goals.

By following these tips, you can ensure that the STU5N70M6-S transistor works correctly and reliably in your power application, and achieve the desired performance and efficiency.

In conclusion, the STU5N70M6-S transistor is a versatile and efficient component that can be used in various power applications. Its high voltage, low losses, and robustness make it a suitable choice for demanding environments and conditions. By understanding its specifications, features, and applications, and following the practical tips for using and selecting it, you can design and operate your power circuit with confidence and excellence.


STU5N70M6-S

STU5N70M6-S

Part Number :
STU5N70M6-S
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 700V 3.5A IPAK
Datasheet :
STU5N70M6-S.pdf
Unit Price :
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In Stock :
2970
Lead Time :
To be Confirmed
Quick Inquiry :
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    STU5N70M6-S Specifications

    Packaging:
    Tube
    Series:
    MDmesh™ M6
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    700 V
    Current-ContinuousDrain(Id)@25°C:
    3.5A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    1.4Ohm @ 1.75A, 10V
    Vgs(th)(Max)@Id:
    3.75V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    5.1 nC @ 10 V
    Vgs(Max):
    ±25V
    InputCapacitance(Ciss)(Max)@Vds:
    170 pF @ 100 V
    FETFeature:
    -
    PowerDissipation(Max):
    45W (Tc)
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Through Hole

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