Understanding the STP9N65M2 MOSFET: Features and Applications
The STP9N65M2 is a high-voltage N-channel MOSFET transistor with a maximum drain-source voltage of 650V and a rated current of 8.3A. It is designed for power switching applications in a wide range of industrial and automotive systems. In this article, we will take a closer look at the main features of this device and its potential applications.
What is a MOSFET and how it Works?
Before diving into the specific characteristics of the STP9N65M2, let's first review the basic principles of a MOSFET transistor. MOSFET stands for Metal-Oxide-Semiconductor Field-Effect Transistor. Basically, it is a three-terminal device consisting of a source, a drain, and a gate. The gate is separated from the channel between the source and the drain by a thin layer of oxide, which acts as an insulator. By applying a voltage to the gate, it is possible to control the flow of current between the source and the drain.
In a N-channel MOSFET, the channel is formed by a N-type material, which allows electrons to flow from the source to the drain. When a positive voltage is applied to the gate, it creates an electric field that attracts the electrons towards the oxide layer. This in turn creates a depletion region that reduces the effective width of the channel, which in turn reduces the amount of current that can flow from the source to the drain. Conversely, when a negative voltage is applied to the gate, it repels the electrons and widens the channel, allowing more current to flow.
Features of the STP9N65M2
The STP9N65M2 is a specific type of MOSFET with some distinctive features that make it suitable for certain applications. Here are some of its key characteristics:
High voltage rating: at 650V, the STP9N65M2 can handle higher voltages than many other MOSFETs on the market. This makes it suitable for power switching applications in systems that require high voltage handling capabilities.
Low on-resistance: the STP9N65M2 has a typical on-resistance of 1.1 Ohm, which means it can sustain a relatively high current without dissipating too much power as heat. This is important for applications where power efficiency is a concern.
Fast switching speed: the STP9N65M2 has a typical switching time of 60 nanoseconds, which means it can turn on and off quickly. This is useful for applications that require precise control of the switching times, such as in motor control or power inverters.
Avalanche rated: the STP9N65M2 is avalanche rated, meaning it can withstand high-energy pulses of voltage without being damaged. This makes it suitable for applications in automotive and other industrial systems where electrical transients can occur.
Applications of the STP9N65M2
The STP9N65M2 can be used in a variety of power switching applications, including:
Motor control: the STP9N65M2 can be used to drive DC or AC motors in appliances, industrial machinery, or automotive systems.
Power supply: the STP9N65M2 can be used as a switch in power supplies to control the flow of current to a load.
Lighting control: the STP9N65M2 can be used in lighting applications to dim or turn on/off LED lights.
Solar inverters: the STP9N65M2 can be used in solar inverters to convert DC voltage from a solar panel to AC voltage that can be used in household appliances.
Electronic ballasts: the STP9N65M2 can be used in electronic ballasts for fluorescent or LED lamps, to regulate the current and voltage in the lamp.
Conclusion
In summary, the STP9N65M2 is a versatile MOSFET transistor that can be used in a wide range of power switching applications. Its high voltage rating, low on-resistance, fast switching speed, and avalanche rating make it suitable for many industrial and automotive systems. By understanding its features and potential applications, designers and engineers can make informed decisions when selecting a MOSFET for their particular project.
STP9N65M2
- Part Number :
- STP9N65M2
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 650V 5A TO220
- Datasheet :
- STP9N65M2.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 983
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
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STP9N65M2 Specifications
- Packaging:
- Tube
- Series:
- MDmesh™
- ProductStatus:
- Active
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 650 V
- Current-ContinuousDrain(Id)@25°C:
- 5A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 900mOhm @ 2.5A, 10V
- Vgs(th)(Max)@Id:
- 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 10 nC @ 10 V
- Vgs(Max):
- ±25V
- InputCapacitance(Ciss)(Max)@Vds:
- 315 pF @ 100 V
- FETFeature:
- -
- PowerDissipation(Max):
- 60W (Tc)
- OperatingTemperature:
- 150°C (TJ)
- MountingType:
- Through Hole
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