How the STP38N65M5 MOSFET is Changing the Game in Power Electronics!


Power electronics is an ever-changing field, with new advancements and innovations being constantly introduced to the market. One recent development that is making waves in the industry is the STP38N65M5 MOSFET. This cutting-edge component is quickly becoming the go-to choice for engineers in a variety of applications, thanks to its impressive power handling capabilities and robust construction.

The STP38N65M5 is a N-channel Power MOSFET designed for high-voltage, high-current applications. With a maximum voltage rating of 650V and a continuous drain current of 38A, this component is capable of handling some of the toughest power conversion tasks. It also features incredibly low on-state resistance, with a typical value of just 53m?. This means that it generates very little heat, which helps to extend the lifespan of the component and reduce the need for additional cooling measures.

Another standout feature of the STP38N65M5 is its rugged construction. The MOSFET has been designed to withstand the rigors of continuous operation in high-temperature environments, and is able to operate at temperatures as high as 175°C. This makes it ideal for use in harsh industrial applications, where reliability and long-term performance are crucial.

One of the key benefits of the STP38N65M5 is its efficiency. Thanks to its low on-state resistance and low capacitance, this MOSFET is able to switch quickly and with minimal losses. This means that it is more efficient than many other similar components on the market, which in turn leads to lower power consumption and higher overall system efficiency. In addition, its high slew rate ensures that it can respond quickly to rapid changes in current and voltage, making it ideal for use in switching applications.

So where is the STP38N65M5 being used? In short, it's being used in a wide variety of applications across a broad range of industries. From motor control and power supplies to solar inverters and welding equipment, this versatile component is finding a home in a growing number of power electronics applications. Designers and engineers appreciate its speed, efficiency, and reliability, and are finding new and innovative ways to incorporate it into their designs.

In conclusion, the STP38N65M5 MOSFET has quickly established itself as a game-changer in the world of power electronics. With its ability to handle high voltage and high current, its rugged construction, and its impressive efficiency, it is quickly becoming the go-to choice for engineers across a wide range of industries. As the field of power electronics continues to grow and evolve, it's clear that components like the STP38N65M5 will continue to be at the forefront of new and exciting developments.


STP38N65M5

STP38N65M5

Part Number :
STP38N65M5
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 30A TO220
Datasheet :
STP38N65M5.pdf
Unit Price :
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In Stock :
2554
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # STP38N65M5 is manufactured by STMicroelectronics and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For STP38N65M5 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add STP38N65M5 with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of STP38N65M5. Buy the STP38N65M5 STMicroelectronics on Worldictown . com,we are STMicroelectronics Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the STP38N65M5 within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    STP38N65M5 Specifications

    Packaging:
    Tube
    Series:
    MDmesh™ V
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    30A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    95mOhm @ 15A, 10V
    Vgs(th)(Max)@Id:
    5V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    71 nC @ 10 V
    Vgs(Max):
    ±25V
    InputCapacitance(Ciss)(Max)@Vds:
    3000 pF @ 100 V
    FETFeature:
    -
    PowerDissipation(Max):
    190W (Tc)
    OperatingTemperature:
    150°C (TJ)
    MountingType:
    Through Hole

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