Understanding the STP31N65M5: Power MOSFET for Superior Performance


If you're working on a medium- to high-power application, you may be looking for a power MOSFET that can provide superior performance. One option you might consider is the STP31N65M5, a power MOSFET from STMicroelectronics. In this article, we'll take a closer look at the STP31N65M5 and explore its features, benefits, and potential applications.

STP31N65M5 Overview

The STP31N65M5 is a N-channel power MOSFET with a breakdown voltage rating of 650 V and a maximum current rating of 31 A. It is designed to provide high switching performance and low power dissipation, making it ideal for applications that require efficiency and reliability. Some of the key features of the STP31N65M5 include:

Low on-resistance (0.11 Ω)

Fast switching speed (typical rise and fall times of 34 ns)

High avalanche ruggedness

Low gate charge (75 nC)

TO-220 packaging

With these features, the STP31N65M5 offers a number of benefits for high-power applications.

Benefits of the STP31N65M5

There are several reasons why the STP31N65M5 may be a good choice for your power application:

High Efficiency

The STP31N65M5's low on-resistance means that it can conduct current with very little power loss, which is important for high-efficiency designs. This, combined with the low gate charge, makes it possible to achieve faster switching speeds and lower switching losses, resulting in reduced power dissipation and higher efficiency.

Reliability

Another benefit of the STP31N65M5 is its high avalanche ruggedness, which allows it to withstand high-energy pulses without damage. This can be particularly important in applications where the device may be exposed to large voltage spikes or other transients. The TO-220 packaging also provides good thermal conductivity, helping to dissipate heat and improve reliability.

Versatility

The STP31N65M5 is suitable for a wide range of applications, including power supplies, motor drives, and inverters. Its low on-resistance and fast switching speed make it a good choice for high-frequency applications, while its high voltage rating and avalanche ruggedness make it suitable for high-voltage applications. It can also be used in parallel configurations to provide higher current capability.

Potential Applications

So, where might you use the STP31N65M5 in your designs? Here are a few examples:

Power Supplies

The STP31N65M5's high efficiency makes it well-suited for use in power supply designs, where minimizing power loss is important. Its fast switching speed also makes it possible to achieve high-frequency operation, which can reduce the size and cost of the output filter.

Motor Drives

In motor drive applications, the STP31N65M5's low on-resistance allows it to deliver high current with low power loss, improving overall efficiency. Its fast switching speed also makes it possible to achieve precise control over the motor's speed and torque.

Inverters

The STP31N65M5 can also be used in applications such as solar inverters, where it can provide efficient power conversion and high reliability. Its high voltage rating and avalanche ruggedness make it suitable for use in high-voltage DC to AC converters.

Conclusion

The STP31N65M5 is a versatile and high-performance power MOSFET that can provide efficiency, reliability, and versatility for a range of high-power applications. Whether you're designing a power supply, motor drive, or inverter, the STP31N65M5 can help you achieve superior performance and reliability, thanks to its low on-resistance, fast switching speed, high avalanche ruggedness, and low gate charge. Consider the STP31N65M5 for your next high-power project for a superior outcome.


STP31N65M5

STP31N65M5

Part Number :
STP31N65M5
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 22A TO220
Datasheet :
STP31N65M5.pdf
Unit Price :
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In Stock :
265
Lead Time :
To be Confirmed
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    STP31N65M5 Specifications

    Packaging:
    Tube
    Series:
    MDmesh™ V
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    22A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    148mOhm @ 11A, 10V
    Vgs(th)(Max)@Id:
    5V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    45 nC @ 10 V
    Vgs(Max):
    ±25V
    InputCapacitance(Ciss)(Max)@Vds:
    816 pF @ 100 V
    FETFeature:
    -
    PowerDissipation(Max):
    150W (Tc)
    OperatingTemperature:
    150°C (TJ)
    MountingType:
    Through Hole

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