STP10N62K3: A High-Voltage N-channel Power MOSFET for Efficient Power Conversion
The STP10N62K3 is a powerful N-channel MOSFET designed for high-voltage applications, offering high efficiency and robustness. In this article, we’ll explore the features, benefits, and potential applications of this versatile power MOSFET.
Overview of STP10N62K3
The STP10N62K3 is a member of the STPOWER family of MOSFETs, renowned for their reliability, efficiency, and thermal performance. The STP10N62K3 is a 620V N-channel MOSFET with a typical on-state resistance of 0.32 ?. It has a maximum drain current rating of 10A and a power dissipation capacity of 248W. The MOSFET is housed in a D2PAK package, making it easy to install and mount on a circuit board.
Advantages of STP10N62K3
One of the most notable advantages of the STP10N62K3 is its low on-state resistance, which translates to lower power losses and higher efficiency in power conversion applications. The MOSFET’s high switching frequency capability and output capacitance also contribute to its high efficiency and fast switching performance. Additionally, the MOSFET’s high avalanche ruggedness makes it highly resistant to voltage spikes, ensuring safe and reliable operation.
Applications of STP10N62K3
The STP10N62K3 is an ideal MOSFET for a wide range of high-voltage applications such as power supplies, motor control, welding equipment, and uninterruptible power supplies (UPS). Its high efficiency and low power losses make it a great choice for high-frequency switching circuits, while its high voltage rating and robustness make it suitable for use in harsh industrial environments.
How to Design with STP10N62K3
To design a circuit using the STP10N62K3, the following parameters should be considered:
Drain-to-source voltage (VDS): maximum voltage the MOSFET can sustain without damage
Drain current (ID): maximum current the MOSFET can carry
On-state resistance (RDS(ON)): resistance between the drain and source when the MOSFET is in the on-state
Input capacitance (Ciss): capacitance between the gate and source pins
Output capacitance (Coss): capacitance between the drain and source pins
Reverse transfer capacitance (Crss): capacitance between the gate and drain pins
By selecting the appropriate values for these parameters based on the specific application requirements, an efficient and reliable circuit can be designed using the STP10N62K3.
Conclusion
The STP10N62K3 is an impressive N-channel power MOSFET that boasts high efficiency, robustness, and thermal performance. Its low on-state resistance, high switching frequency, and high avalanche ruggedness make it an ideal choice for a wide range of high-voltage applications. By considering the key parameters when designing a circuit with the STP10N62K3, engineers can create highly efficient, reliable power conversion solutions.
STP10N62K3
- Part Number :
- STP10N62K3
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 620V 8.4A TO220AB
- Datasheet :
-
STP10N62K3.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 813
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
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STP10N62K3 Specifications
- Packaging:
- Tube
- Series:
- SuperMESH3™
- ProductStatus:
- Obsolete
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 620 V
- Current-ContinuousDrain(Id)@25°C:
- 8.4A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 750mOhm @ 4A, 10V
- Vgs(th)(Max)@Id:
- 4.5V @ 100µA
- GateCharge(Qg)(Max)@Vgs:
- 42 nC @ 10 V
- Vgs(Max):
- ±30V
- InputCapacitance(Ciss)(Max)@Vds:
- 1250 pF @ 50 V
- FETFeature:
- -
- PowerDissipation(Max):
- 125W (Tc)
- OperatingTemperature:
- -55°C ~ 150°C (TJ)
- MountingType:
- Through Hole
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