STI18N65M5: The Ultimate MOSFET for High Power Applications
As technological innovations continue to advance, so do the needs for high power and high-performance devices. The STI18N65M5 MOSFET is a powerful device designed specifically for high power applications. In this post, we will look at the features, benefits and applications of STI18N65M5.
Features of STI18N65M5
STI18N65M5 is a member of .SUPERFET? III MOSFET family which is specifically designed for high-voltage power applications. It has superior switching performance and low ON resistance which offers significant benefits over traditional MOSFETs. Some of the features of STI18N65M5 include:
High voltage capability (650V)
Low RDS(on)
Ultra-low gate charge
High avalanche ruggedness
Fast and efficient switching performance
Benefits of STI18N65M5
Due to its superior features, STI18N65M5 offers several benefits over traditional MOSFETs, which includes:
Reduced switching losses.
Improved thermal efficiency.
Improved mechanical design due to smaller size.
Reduced total system cost through higher efficiency and reduced cooling requirements.
Applications of STI18N65M5
STI18N65M5 is specially designed for use in high-power applications such as:
Solar Power inverters
UPS (Uninterruptible Power Supplies)
Industrial Motor Drives
EV (Electric Vehicle) Charging
Welding Equipment
High Voltage DC/DC Converters
Server Power Supplies
In Conclusion
STI18N65M5 is a powerful MOSFET that offers several benefits over traditional MOSFETs such as reduced switching losses, improved thermal efficiency, and reduced total system cost. In addition, it can be used in a wide range of applications from solar power inverters, motor drives, EV charging, and server power supplies among others. Overall, the STI18N65M5 is a reliable and efficient power device suitable for high power applications.
STI18N65M5
- Part Number :
- STI18N65M5
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N CH 650V 15A I2PAK
- Datasheet :
-
STI18N65M5.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 348
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
STI18N65M5 Specifications
- Packaging:
- Tube
- Series:
- MDmesh™ V
- ProductStatus:
- Obsolete
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 650 V
- Current-ContinuousDrain(Id)@25°C:
- 15A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 220mOhm @ 7.5A, 10V
- Vgs(th)(Max)@Id:
- 5V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 31 nC @ 10 V
- Vgs(Max):
- ±25V
- InputCapacitance(Ciss)(Max)@Vds:
- 1240 pF @ 100 V
- FETFeature:
- -
- PowerDissipation(Max):
- 110W (Tc)
- OperatingTemperature:
- 150°C (TJ)
- MountingType:
- Through Hole
STI18N65M5 Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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