STGB30H65DFB2: The Ultimate Power Semiconductor Solution


Power electronics is a fast-growing field that involves the use of semiconductor devices to control and convert electrical power. The need for high-performance power semiconductor devices has increased significantly in recent years, especially in applications such as electric vehicles, renewable energy systems, and industrial automation. One of the most promising power semiconductor devices that has gained widespread adoption is the STGB30H65DFB2.

In this blog post, we will provide an in-depth analysis of the STGB30H65DFB2, including its features, benefits, and how it works. We will also discuss some of the applications where this device has been widely used, and explore its potential for future implementations.

Features of the STGB30H65DFB2

The STGB30H65DFB2 is a high-voltage, three-phase IGBT (Insulated Gate Bipolar Transistor) designed for use in modern power electronics systems. Some of the key features that make the STGB30H65DFB2 stand out are:

High voltage capability: With a maximum voltage of 650V, the STGB30H65DFB2 can handle high-voltage applications with ease.

High current density: The device's optimized design ensures a high current density, allowing it to handle large currents without compromising performance.

Effective switching: The low-on voltage of the device helps minimize switching losses, making it an ideal solution for high-frequency applications.

Robustness: The STGB30H65DFB2 is designed to withstand high temperatures and harsh environmental conditions, making it ideal for demanding applications.

Benefits of the STGB30H65DFB2

The STGB30H65DFB2 is a highly reliable solution that provides a number of benefits to its users. Some of the key benefits are:

Enhanced efficiency: The device's optimized design and robustness helps enhance the overall efficiency of the power electronics system.

Reduced power consumption: The low-on voltage of the device helps reduce power consumption, resulting in lower energy bills and less carbon footprint.

Improved system performance: The high current density and effective switching of the STGB30H65DFB2 ensures improved system performance, allowing for better control and stability of the power electronics system.

Reduced maintenance costs: The device's robustness allows it to operate in harsh conditions without frequent breakdowns or repairs, thereby reducing the overall maintenance costs.

Applications of the STGB30H65DFB2

The STGB30H65DFB2 has found widespread adoption in a range of applications across various industries. Some of the most common applications of the device are:

Industrial automation: The STGB30H65DFB2 enables the control of motors and drives used in industrial automation equipment, providing improved performance and precision control.

Electric vehicles: The device is ideal for use in electric vehicle systems, as it can handle high voltages and large currents while ensuring high efficiency and reduced power consumption.

Renewable energy systems: The STGB30H65DFB2 is highly suitable for use in renewable energy systems, such as wind turbines and solar power inverters, due to its high reliability and robustness.

Power supplies: The device can be used to control and convert AC and DC power supplies, providing optimal performance and efficiency.

Future potential of the STGB30H65DFB2

The STGB30H65DFB2 has already established itself as a reliable and efficient power semiconductor device, and its potential for future implementations looks promising. Some of the potential future applications of the device are:

Data centers: The STGB30H65DFB2 can be used in data centers to drive power electronics systems, providing efficient and reliable performance.

Aerospace: The device's robustness and low-on voltage make it suitable for a range of aerospace applications, such as powering avionics and spacecraft.

Medical equipment: The STGB30H65DFB2 can be used in various medical equipment, such as ultrasound devices, CT scanners, and MRI machines, due to its high efficiency and reliability.

Conclusion

The STGB30H65DFB2 is a highly reliable and efficient power semiconductor device that has found widespread adoption in various applications across various industries. Its high voltage capability, high current density, and effective switching make it an ideal power electronics solution for modern systems. With its future potential in a range of applications from data centers to aerospace and medical equipment, the STGB30H65DFB2 will undoubtedly continue to play a significant role in advancing power electronics technology.


STGB30H65DFB2

STGB30H65DFB2

Part Number :
STGB30H65DFB2
Manufacturer :
STMicroelectronics
Description :
TRENCH GATE FIELD-STOP 650 V, 30
Datasheet :
STGB30H65DFB2.pdf
Unit Price :
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In Stock :
3261
Lead Time :
To be Confirmed
Quick Inquiry :
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    STGB30H65DFB2 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    HB2
    ProductStatus:
    Active
    IGBTType:
    Trench Field Stop
    Voltage-CollectorEmitterBreakdown(Max):
    650 V
    Current-Collector(Ic)(Max):
    50 A
    Current-CollectorPulsed(Icm):
    90 A
    Vce(on)(Max)@VgeIc:
    2.1V @ 15V, 30A
    Power-Max:
    167 W
    SwitchingEnergy:
    270µJ (on), 310µJ (off)
    InputType:
    Standard
    GateCharge:
    90 nC
    Td(on/off)@25°C:
    18.4ns/71ns
    TestCondition:
    400V, 30A, 6.8Ohm, 15V
    ReverseRecoveryTime(trr):
    115 ns
    OperatingTemperature:
    -55°C ~ 175°C (TJ)
    MountingType:
    Surface Mount

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