STB20NM60T4 Field Effect Transistor: Understanding the Benefits and Applications


As electronic devices continue to evolve and advance, so does the demand for more efficient and reliable components. The STB20NM60T4 Field Effect Transistor (FET) is a notable example of such a component, offering a range of appealing benefits for various applications. In this article, we'll explore what the STB20NM60T4 FET is, how it works, its key features and specifications, and some common applications that make use of it.

What is the STB20NM60T4 FET?

The STB20NM60T4 is a type of FET, a semiconductor device that allows the control of electrical current through the manipulation of an electric field. Specifically, the STB20NM60T4 is a N-channel FET (NFET), meaning it uses electrons as the charge carriers and is activated by a negative gate voltage. This FET boasts a high voltage capacity of 600V, a maximum current rating of 20A, and a low on-resistance of 0.29?, making it a highly efficient and reliable device for a range of applications.

How does the STB20NM60T4 FET work?

At its core, the STB20NM60T4 FET works by controlling the flow of electrons through a conducting channel formed within its silicon substrate. The channel is created by applying a positive voltage bias to the gate, which attracts and accumulates electrons at the surface of the substrate, forming a conductive path between the source and the drain. The gate voltage can be adjusted to regulate the degree of electron accumulation and hence the conductivity of the channel, allowing for precise control of the current flow.

Key Features and Specifications

The STB20NM60T4 FET boasts several key features and specifications that make it a popular choice for a range of applications. Here are some of the highlights:

High voltage capacity: 600V rating allows for use in a range of high-power applications

Low on-resistance: 0.29? maximum helps minimize power loss and maximize efficiency

Fast switching speed: 50ns rise/fall time and 110ns turn-on/off time make it suitable for switching applications

High thermal performance: junction-to-case thermal resistance of 0.5°C/W helps dissipate heat effectively

Robust package: D2PAK package provides high mechanical strength and compact footprint for easy integration

Applications

With its impressive range of features and performance, the STB20NM60T4 can be found in various applications across several industries. Here are some common examples:

Motor control: the FET can be used in motor drives and controllers to regulate speed and direction of rotation

Power supplies: the high voltage capacity and low on-resistance make it suitable for use in power conversion and regulation circuits

Lighting: the fast switching speed and low power loss make it ideal for use in LED drivers and lighting dimmers

Audio amplifiers: the high current rating and thermal performance make it a reliable choice for high-power audio amplifiers

Renewable energy: the robust package and high efficiency make it suitable for inverters used in solar and wind energy systems

Conclusion

The STB20NM60T4 Field Effect Transistor offers a range of impressive features and specifications that make it a highly efficient and reliable component for a range of applications. From motor control to renewable energy, this FET can help improve the performance and reliability of various electronic systems and devices. Understanding how it works and what it can offer can help engineers and designers make informed decisions when selecting components for their projects.


STB20NM60T4

STB20NM60T4

Part Number :
STB20NM60T4
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 20A D2PAK
Datasheet :
STB20NM60T4.pdf
Unit Price :
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In Stock :
2967
Lead Time :
To be Confirmed
Quick Inquiry :
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    STB20NM60T4 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    MDmesh™
    ProductStatus:
    Active
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    600 V
    Current-ContinuousDrain(Id)@25°C:
    20A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    10V
    RdsOn(Max)@IdVgs:
    290mOhm @ 10A, 10V
    Vgs(th)(Max)@Id:
    5V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    54 nC @ 10 V
    Vgs(Max):
    ±30V
    InputCapacitance(Ciss)(Max)@Vds:
    1500 pF @ 25 V
    FETFeature:
    -
    PowerDissipation(Max):
    192W (Tc)
    OperatingTemperature:
    150°C (TJ)
    MountingType:
    Surface Mount

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