SPD08P06PGBTMA1

SPD08P06PGBTMA1

Part Number :
SPD08P06PGBTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 60V 8.83A TO252-3
Datasheet :
SPD08P06PGBTMA1.pdf
Category :
Transistors - FETs, MOSFETs - Single
Unit Price :
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In Stock :
1355
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # SPD08P06PGBTMA1 (Transistors - FETs, MOSFETs - Single) is manufactured by Infineon Technologies and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For SPD08P06PGBTMA1 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SPD08P06PGBTMA1 with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of SPD08P06PGBTMA1. Buy the SPD08P06PGBTMA1 Infineon Technologies on Worldictown . com,we are Infineon Technologies Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the SPD08P06PGBTMA1 within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    SPD08P06PGBTMA1 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    SIPMOS®
    ProductStatus:
    Active
    FETType:
    P-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    60 V
    Current-ContinuousDrain(Id)@25°C:
    8.83A (Ta)
    DriveVoltage(MaxRdsOnMinRdsOn):
    6.2V
    RdsOn(Max)@IdVgs:
    300mOhm @ 10A, 6.2V
    Vgs(th)(Max)@Id:
    4V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    13 nC @ 10 V
    Vgs(Max):
    ±20V
    InputCapacitance(Ciss)(Max)@Vds:
    420 pF @ 25 V
    FETFeature:
    -
    PowerDissipation(Max):
    42W (Tc)
    OperatingTemperature:
    -55°C ~ 175°C (TJ)
    MountingType:
    Surface Mount

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