SIHB21N65EF-GE3
- Part Number :
- SIHB21N65EF-GE3
- Manufacturer :
- Vishay Siliconix
- Description :
- MOSFET N-CH 650V 21A D2PAK
- Datasheet :
-
SIHB21N65EF-GE3.pdf
- Category :
- Transistors - FETs, MOSFETs - Single
- Unit Price :
- Request a Quote
- In Stock :
- 443
- Lead Time :
- To be Confirmed
- Quick Inquiry :
- - + Add To Cart
Request a Quote
Part Number # SIHB21N65EF-GE3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Worldictown . com.
Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers.
Their quality is guaranteed by its stringent quality control to meet all required standards.For SIHB21N65EF-GE3 specifications/configurations,
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Buy the SIHB21N65EF-GE3 Vishay Siliconix on Worldictown . com,we are Vishay Siliconix Corporation distributor,
we sales new&original and offer 24 hours service,90 days warranty date, send the SIHB21N65EF-GE3 within 24 hours,please contact our sales team or send email to
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SIHB21N65EF-GE3 Specifications
- Packaging:
- Tube
- Series:
- -
- ProductStatus:
- Active
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 650 V
- Current-ContinuousDrain(Id)@25°C:
- 21A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 180mOhm @ 11A, 10V
- Vgs(th)(Max)@Id:
- 4V @ 250µA
- GateCharge(Qg)(Max)@Vgs:
- 106 nC @ 10 V
- Vgs(Max):
- ±30V
- InputCapacitance(Ciss)(Max)@Vds:
- 2322 pF @ 100 V
- FETFeature:
- -
- PowerDissipation(Max):
- 208W (Tc)
- OperatingTemperature:
- -55°C ~ 150°C (TJ)
- MountingType:
- Surface Mount
SIHB21N65EF-GE3 Guarantees
-
Service Guarantees
We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
-
Quality Guarantees
We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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