SI2303CDS-T1-E3

SI2303CDS-T1-E3

Part Number :
SI2303CDS-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V 2.7A SOT23-3
Datasheet :
SI2303CDS-T1-E3.pdf
Category :
Transistors - FETs, MOSFETs - Single
Unit Price :
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In Stock :
2083
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # SI2303CDS-T1-E3 (Transistors - FETs, MOSFETs - Single) is manufactured by Vishay Siliconix and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For SI2303CDS-T1-E3 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add SI2303CDS-T1-E3 with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of SI2303CDS-T1-E3. Buy the SI2303CDS-T1-E3 Vishay Siliconix on Worldictown . com,we are Vishay Siliconix Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the SI2303CDS-T1-E3 within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    SI2303CDS-T1-E3 Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    TrenchFET®
    ProductStatus:
    Active
    FETType:
    P-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    30 V
    Current-ContinuousDrain(Id)@25°C:
    2.7A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    4.5V, 10V
    RdsOn(Max)@IdVgs:
    190mOhm @ 1.9A, 10V
    Vgs(th)(Max)@Id:
    3V @ 250µA
    GateCharge(Qg)(Max)@Vgs:
    8 nC @ 10 V
    Vgs(Max):
    ±20V
    InputCapacitance(Ciss)(Max)@Vds:
    155 pF @ 15 V
    FETFeature:
    -
    PowerDissipation(Max):
    2.3W (Tc)
    OperatingTemperature:
    -55°C ~ 150°C (TJ)
    MountingType:
    Surface Mount

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