RN1901FETE85LF

RN1901FETE85LF

Part Number :
RN1901FETE85LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN PREBIAS 0.1W ES6
Datasheet :
RN1901FETE85LF.pdf
Category :
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Unit Price :
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In Stock :
3648
Lead Time :
To be Confirmed
Quick Inquiry :
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  • Part Number # RN1901FETE85LF (Transistors - Bipolar (BJT) - Arrays, Pre-Biased) is manufactured by Toshiba Semiconductor and Storage and distributed by Worldictown . com. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For RN1901FETE85LF specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add RN1901FETE85LF with quantity into BOM. Worldictown . com does NOT require any registration to request a quote of RN1901FETE85LF. Buy the RN1901FETE85LF Toshiba Semiconductor and Storage on Worldictown . com,we are Toshiba Semiconductor and Storage Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the RN1901FETE85LF within 24 hours,please contact our sales team or send email to info@worldictown.com Hope we can cooperate in the future.

    RN1901FETE85LF Specifications

    Packaging:
    Tape & Reel (TR),Cut Tape (CT)
    Series:
    -
    ProductStatus:
    Active
    TransistorType:
    2 NPN - Pre-Biased (Dual)
    Current-Collector(Ic)(Max):
    100mA
    Voltage-CollectorEmitterBreakdown(Max):
    50V
    Resistor-Base(R1):
    4.7kOhms
    Resistor-EmitterBase(R2):
    4.7kOhms
    DCCurrentGain(hFE)(Min)@IcVce:
    30 @ 10mA, 5V
    VceSaturation(Max)@IbIc:
    300mV @ 250µA, 5mA
    Current-CollectorCutoff(Max):
    100nA (ICBO)
    Frequency-Transition:
    250MHz
    Power-Max:
    100mW
    MountingType:
    Surface Mount

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    We provide 90 days warranty.

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