Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET |
135 | 11.02 |
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Datasheet |
Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole | |
STW34NM60NMOSFET N-CH 600V 29A TO247-3 |
3481 | 11.10 |
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Datasheet |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±25V | 2722 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole | |
FCH041N60EMOSFET N-CH 600V 77A TO247-3 |
448 | 11.61 |
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Datasheet |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 39A, 10V | 3.5V @ 250µA | 380 nC @ 10 V | ±20V | 13700 pF @ 100 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTA130N15X4MOSFET N-CH 150V 130A TO263AA |
1562 | 11.66 |
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Datasheet |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 8mOhm @ 65A, 10V | 4.5V @ 250µA | 87 nC @ 10 V | ±20V | 4770 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
C3M0120090JSICFET N-CH 900V 22A D2PAK-7 |
7112 | 11.80 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
UJ4C075033K4S750V/33MOHM, SIC, CASCODE, G4, T |
526 | 11.84 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 47A (Tc) | 12V | 41mOhm @ 30A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH18N90PMOSFET N-CH 900V 18A TO247AD |
300 | 12.05 |
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Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 18A (Tc) | 10V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 97 nC @ 10 V | ±30V | 5230 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
LSIC1MO120E0160SICFET N-CH 1200V 22A TO247-3 |
1154 | 12.18 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 57 nC @ 20 V | +22V, -6V | 870 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTT20P50PMOSFET P-CH 500V 20A TO268 |
1065 | 12.86 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 450mOhm @ 10A, 10V | 4V @ 250µA | 103 nC @ 10 V | ±20V | 5120 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTT16P60PMOSFET P-CH 600V 16A TO268 |
802 | 12.86 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 720mOhm @ 500mA, 10V | 4.5V @ 250µA | 92 nC @ 10 V | ±20V | 5120 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTT48P20PMOSFET P-CH 200V 48A TO268 |
3796 | 12.86 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 85mOhm @ 24A, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IMW120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-3 |
370 | 13.15 |
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Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
MSC080SMA120BSICFET N-CH 1200V 37A TO247-3 |
3579 | 13.67 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 37A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H070LDGGANFET N-CH 650V 25A 3PQFN |
293 | 13.74 |
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Datasheet |
Tube | TP65H070L | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPP65R041CFD7XKSA1650V FET COOLMOS TO247 |
144 | 13.77 |
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Datasheet |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
C3M0120100KSICFET N-CH 1000V 22A TO247-4L |
2957 | 13.78 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | ±15V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
NTH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
232 | 14.45 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
C3M0060065JSICFET N-CH 650V 36A TO263-7 |
1664 | 14.91 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 36A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | |
C3M0060065DSICFET N-CH 650V 37A TO247-3 |
431 | 14.91 |
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Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | |
IMZ120R090M1HXKSA1SICFET N-CH 1.2KV 26A TO247-4 |
355 | 15.13 |
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Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 117mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | +23V, -7V | 707 pF @ 800 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |