Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IPW60R040C7XKSA1MOSFET N-CH 600V 50A TO247-3 |
2311 | 16.24 |
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Datasheet |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH30N60L2MOSFET N-CH 600V 30A TO247 |
916 | 19.77 |
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Datasheet |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SPW47N60C3FKSA1MOSFET N-CH 650V 47A TO247-3 |
615 | 20.15 |
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Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 320 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
UF3C065030K4SMOSFET N-CH 650V 85A TO247-4 |
1988 | 20.16 |
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Datasheet |
Tube | - | Active | N-Channel | - | 650 V | 85A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXFH16N120PMOSFET N-CH 1200V 16A TO247AD |
680 | 20.83 |
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Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 8A, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
LSIC1MO120E0080SICFET N-CH 1200V 39A TO247-3 |
791 | 21.27 |
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Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 39A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 95 nC @ 20 V | +22V, -6V | 1825 pF @ 800 V | - | 179W (Tc) | -55°C ~ 150°C | Through Hole | |
IXTT80N20LMOSFET N-CH 200V 80A TO268 |
580 | 21.76 |
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Datasheet |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 6160 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXFK44N80PMOSFET N-CH 800V 44A TO264AA |
600 | 22.47 |
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Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTX32P60PMOSFET P-CH 600V 32A PLUS247-3 |
298 | 22.60 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 350mOhm @ 16A, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFT220N20X3HVMOSFET N-CH 200V 220A TO268HV |
1696 | 22.82 |
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Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IXTK90P20PMOSFET P-CH 200V 90A TO264 |
3555 | 22.82 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 44mOhm @ 500mA, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTR170P10PMOSFET P-CH 100V 108A ISOPLUS247 |
1119 | 22.84 |
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Datasheet |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 108A (Tc) | 10V | 13mOhm @ 85A, 10V | 4V @ 1mA | 240 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXFK240N15T2MOSFET N-CH 150V 240A TO264AA |
126 | 22.92 |
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Datasheet |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 460 nC @ 10 V | ±20V | 32000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
DMN6069SE-13MOSFET N-CH 60V 4.3A/10A SOT223 |
5000 | 0.57 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.3A (Ta), 10A (Tc) | 4.5V, 10V | 69mOhm @ 3A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 825 pF @ 30 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
AOSP32320CMOSFET N-CH 30V 8.5A 8SOIC |
24869 | 0.57 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 22mOhm @ 8.5A, 10V | 2.3V @ 250µA | 20 nC @ 10 V | ±20V | 650 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
2SJ305TE85LFMOSFET P-CH 30V 200MA SC59 |
13746 | 0.57 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 200mA (Ta) | 2.5V | 4Ohm @ 50mA, 2.5V | - | - | ±20V | 92 pF @ 3 V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | |
DMN3016LSS-13MOSFET N-CH 30V 10.3A 8SO |
5659 | 0.57 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10.3A (Ta) | 4.5V, 10V | 12mOhm @ 12A, 10V | 2.5V @ 250µA | 25.1 nC @ 10 V | ±20V | 1415 pF @ 15 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
IPW60R045CPFKSA1MOSFET N-CH 650V 60A TO247-3 |
117 | 23.48 |
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Datasheet |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
MMIX1F520N075T2MOSFET N-CH 75V 500A 24SMPD |
3504 | 23.81 |
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Datasheet |
Tube | GigaMOS™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
G3R30MT12KSIC MOSFET N-CH 90A TO247-4 |
2828 | 23.88 |
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Datasheet |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |