Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SLA5060MOSFET 3N/3P-CH 60V 6A 12-SIP |
637 | 6.76 |
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Datasheet |
Bulk | - | Active | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 6A | 220mOhm @ 3A, 4V | - | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole | |
FDMS8090MOSFET 2N-CH 100V 10A PWR56 |
288 | 6.86 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 10A | 13mOhm @ 10A, 10V | 4V @ 250µA | 27nC @ 10V | 1800pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | Surface Mount | |
EPC2100GAN TRANS ASYMMETRICAL HALF BRID |
402 | 6.94 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | |
EPC2101GAN TRANS ASYMMETRICAL HALF BRID |
193 | 9.16 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eGaN® | Active | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | |
DF23MR12W1M1B11BPSA1MOSFET MOD 1200V 25A |
3787 | 97.04 |
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Datasheet |
Tray | CoolSiC™+ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | |
DF23MR12W1M1PB11BPSA1MOSFET MODULE 1200V |
3395 | 101.48 |
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Datasheet |
Tray | EasyPACK™ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | |
FBG20N04ACGAN FET HEMT200V 4A COTS 4FSMD-A |
2428 | 313.40 |
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Datasheet |
Tray | eGaN® | Active | - | Logic Level Gate | 200V | 4A (Tc) | 130mOhm @ 4A, 5V | 2.8V @ 1mA | 3nC @ 5V | 150pF @ 100V | - | -55°C ~ 150°C (TJ) | Surface Mount | |
WAB300M12BM31200 V, 300 A HALF-BRIDGE MODULE |
3803 | 901.59 |
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Datasheet |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 382A (Tc) | 5.2mOhm @ 300A, 15V | 3.6V @ 92mA | 908nC @ 15V | 24500pF @ 1000V | - | -40°C ~ 175°C (TJ) | Chassis Mount | |
G4953SP+P -30V,RD(MAX)<60M@-10V,RD(MAX |
3893 | 0.46 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Standard | 30V | 5A (Tc) | 60mOhm @ 5A, 10V | 3V @ 250µA | 11nC @ 10V | 520pF @ 15V | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
PMDXB1200UPEZNEXPERIA PMDXB1200UPE - 30V, DUA |
2772 | 0.07 |
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Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
FDZ1827NZSMALL SIGNAL FIELD-EFFECT TRANSI |
2181 | 0.12 |
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Datasheet |
Bulk | PowerTrench® | Active | 2 N-Channel (Dual) Common Drain | Standard | 20V | 10A (Ta) | 13mOhm @ 1A, 4.5V | 1.2V @ 250µA | 24nC @ 10V | 2055pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
PJT7002H_R1_0000160V N-CHANNEL ENHANCEMENT MODE M |
2590 | 0.26 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | - | 60V | 250mA (Ta) | 5Ohm @ 300mA, 10V | 3V @ 250µA | 1.3nC @ 4.5V | 22pF @ 25V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
G20N06D52N60V,RD(MAX)<30M@10V,RD(MAX)<40M |
2405 | 0.74 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 60V | 20A (Ta) | 30mOhm @ 20A, 10V | 2.5V @ 250µA | 25nC @ 10V | 1220pF @ 30V | 45W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | |
FDC6320CSMALL SIGNAL FIELD-EFFECT TRANSI |
2255 | 0.22 |
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Datasheet |
Bulk | - | Active | N and P-Channel | Logic Level Gate | 25V | 220mA, 120mA | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.4nC @ 4.5V | 9.5pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | |
UPA1981TE-T1-AUPA1981TE-T1-A - N-CHANNEL/P-CHA |
2058 | 0.22 |
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Datasheet |
Bulk | - | Obsolete | N and P-Channel | Standard | 8V | 2.8A (Ta) | 70mOhm @ 2.8A, 5V, 105mOhm @ 1.9A, 2.5V | 200mV @ 2.8A, 200mV @ 1.9A | - | - | 1W (Ta) | 150°C | Surface Mount | |
FDC6302PSMALL SIGNAL FIELD-EFFECT TRANSI |
3529 | 0.25 |
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Datasheet |
Bulk | - | Active | 2 P-Channel (Dual) | Logic Level Gate | 25V | 120mA | 10Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31nC @ 4.5V | 11pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | |
PJX8601_R1_00001COMPLEMENTARY ENHANCEMENT MODE M |
3469 | 0.39 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel Complementary | Standard | 20V | 500mA (Ta) | 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V | 900mV @ 250µA, 1V @ 250µA | 1.4nC @ 4.5V | 67pF @ 10V, 38pF @ 10V | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
PJT138K-AU_R1_000A150V N-CHANNEL ENHANCEMENT MODE M |
2759 | 0.39 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 50V | 360mA (Ta) | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 1nC @ 4.5V | 50pF @ 25V | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDMA1025PPOWER FIELD-EFFECT TRANSISTOR, 3 |
3386 | 0.27 |
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Datasheet |
Bulk | PowerTrench® | Active | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.1A | 155mOhm @ 3.1A, 4.5V | 1.5V @ 250µA | 4.8nC @ 4.5V | 450pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | |
2N7002PS/ZLXNEXPERIA 2N7002PS - 60 V, 320 MA |
2655 | 0.28 |
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Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |