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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Photo Mfr. Part # Stock Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SS23-TP

SS23-TP

DIODE SCHOTTKY 30V 2A DO214AC

Micro Commercial Co

1572 0.43
- +

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SS23-TP

Datasheet

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 2A -55°C ~ 125°C 550 mV @ 2 A
KYZ25A4

KYZ25A4

DIODE STD D12.77X6.6Z 400V 25A

Diotec Semiconductor

500 1.77
- +

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KYZ25A4

Datasheet

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 100 µA @ 400 V 400 V 25A -50°C ~ 175°C 1.1 V @ 25 A
1N5400K

1N5400K

DIODE STD DO-15 50V 3A

Diotec Semiconductor

4000 0.07
- +

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1N5400K

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 50 V 50 V 3A -50°C ~ 175°C -
EM 2V1

EM 2V1

DIODE GEN PURP 400V 1.2A AXIAL

Sanken

5846 0.55
- +

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EM 2V1

Datasheet

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 400 V 400 V 1.2A -40°C ~ 150°C 920 mV @ 1.2 A
SS1FL4HM3/H

SS1FL4HM3/H

DIODE SCHOTTKY 40V 1A DO-219AB

Vishay General Semiconductor - Diodes Division

27102 0.41
- +

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SS1FL4HM3/H

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 115pF @ 4V, 1MHz - 200 µA @ 40 V 40 V 1A -55°C ~ 150°C 500 mV @ 1 A
BAS16THR

BAS16THR

BAS16TH/SOT23/TO-236AB

Nexperia USA Inc.

2724 0.26
- +

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BAS16THR

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, BAS16 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 4 ns 500 nA @ 80 V 100 V 215mA (DC) 175°C (Max) 1.25 V @ 150 mA
NRVB0530T3G

NRVB0530T3G

DIODE SCHOTTKY 30V 500MA SOD123

onsemi

49250 0.38
- +

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NRVB0530T3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 130 µA @ 30 V 30 V 500mA -65°C ~ 125°C 430 mV @ 500 mA
UF1008F_T0_00001

UF1008F_T0_00001

ITO-220AC, ULTRA

Panjit International Inc.

1990 1.78
- +

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UF1008F_T0_00001

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 100 ns 1 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.7 V @ 10 A
1N5401K

1N5401K

DIODE STD DO-15 100V 3A

Diotec Semiconductor

4000 0.07
- +

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1N5401K

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 100 V 100 V 3A -50°C ~ 175°C -
S4D R7G

S4D R7G

DIODE GEN PURP 200V 4A DO214AB

Taiwan Semiconductor Corporation

2314 0.51
- +

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S4D R7G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 10 µA @ 200 V 200 V 4A -55°C ~ 150°C 1.15 V @ 4 A
UF4003-E3/73

UF4003-E3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6357 0.53
- +

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UF4003-E3/73

Datasheet

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
BAS116GWX

BAS116GWX

DIODE GEN PURP 75V 215MA SOD123

Nexperia USA Inc.

1774 0.26
- +

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BAS116GWX

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 3 µs 5 nA @ 75 V 75 V 215mA (DC) 150°C (Max) 1.25 V @ 150 mA
S1J R3G

S1J R3G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

8645 0.40
- +

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S1J R3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 12pF @ 4V, 1MHz 1.5 µs 1 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.1 V @ 1 A
NTE638

NTE638

D-DAMPER 1600V 2.5A

NTE Electronics, Inc

373 1.78
- +

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NTE638

Datasheet

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 4 ns 50 µA @ 1600 V 1600 V 2.5A -40°C ~ 150°C 1.3 V @ 2.5 A
US2G-HF

US2G-HF

RECTIFIER ULTRA FAST RECOVERY 40

Comchip Technology

5000 0.40
- +

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US2G-HF

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.3 V @ 2 A
AL01V1

AL01V1

DIODE GEN PURP 400V 1A AXIAL

Sanken

8856 0.56
- +

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AL01V1

Datasheet

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 10 µA @ 400 V 400 V 1A -40°C ~ 150°C 1.4 V @ 1 A
UF4005-E3/73

UF4005-E3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7428 0.53
- +

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UF4005-E3/73

Datasheet

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BAS116HMFHT116

BAS116HMFHT116

HIGH RELIABILITY AUTOMOTIVE SWIT

Rohm Semiconductor

1716 0.26
- +

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BAS116HMFHT116

Datasheet

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 0V, 1MHz 3 µs 5 nA @ 75 V 80 V 215mA (DC) 150°C (Max) 1.25 V @ 150 mA
1N914TR

1N914TR

DIODE GEN PURP 100V 200MA DO35

onsemi

16815 0.10
- +

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1N914TR

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA -65°C ~ 175°C 1 V @ 10 mA
NTE570

NTE570

D-CONTROLLED AVALANCHE

NTE Electronics, Inc

924 1.80
- +

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NTE570

Datasheet

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - - 10 µA @ 130 V 130 V 1A -40°C ~ 150°C -
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