Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reset All
Apply All
Results:
Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GP2T080A120USIC MOSFET 1200V 80M TO-247-3L |
3046 | 12.44 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
GP2T080A120HSIC MOSFET 1200V 80M TO-247-4L |
3717 | 11.62 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 61 nC @ 20 V | +25V, -10V | 1377 pF @ 1000 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
GCMX080B120S1-E1SIC 1200V 80M MOSFET SOT-227 |
3515 | 23.32 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1336 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | |
GCMS080B120S1-E1SIC 1200V 80M MOSFET & 10A SBD S |
3029 | 25.96 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 58 nC @ 20 V | +25V, -10V | 1374 pF @ 1000 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | |
GP2T040A120USIC MOSFET 1200V 40M TO-247-3L |
3383 | 21.83 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole | |
GP2T040A120HSIC MOSFET 1200V 40M TO-247-4L |
3770 | 22.29 |
Add To CartInquiry Now |
Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole |