Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TP65H300G4LSGGANFET N-CH 650V 6.5A 3PQFN |
2438 | 4.02 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 6.5A (Tc) | 8V | 312mOhm @ 5A, 8V | 2.6V @ 500µA | 9.6 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TP65H070LSG-TRGANFET N-CH 650V 25A PQFN88 |
13260 | 13.74 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TP65H070L | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TPH3206PSGANFET N-CH 600V 17A TO220AB |
138 | 10.37 |
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Datasheet |
Tube | - | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H070LDGGANFET N-CH 650V 25A 3PQFN |
293 | 13.74 |
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Datasheet |
Tube | TP65H070L | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TP65H050WSGANFET N-CH 650V 34A TO247-3 |
236 | 19.24 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H035G4WSGANFET N-CH 650V 46.5A TO247-3 |
716 | 19.54 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 10V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 22 nC @ 0 V | ±20V | 1500 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C | Through Hole | |
TP90H050WSGANFET N-CH 900V 34A TO247-3 |
172 | 20.03 |
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Datasheet |
Tube | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 900 V | 34A (Tc) | 10V | 63mOhm @ 22A, 10V | 4.4V @ 700µA | 17.5 nC @ 10 V | ±20V | 980 pF @ 600 V | - | 119W (Tc) | -55°C ~ 150°C | Through Hole | |
TP65H035WSQAGANFET N-CH 650V 47.2A TO247-3 |
545 | 23.20 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H015G5WS650 V 95 A GAN FET |
456 | 35.14 |
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Datasheet |
Tube | SuperGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 93A (Tc) | 10V | 18mOhm @ 60A, 10V | 4.8V @ 2mA | 100 nC @ 10 V | ±20V | 5218 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TPH3206PDGANFET N-CH 600V 17A TO220AB |
130 | 11.26 |
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Datasheet |
Tube | - | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H050WSQAGANFET N-CH 650V 36A TO247-3 |
213 | 20.67 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 36A (Tc) | 10V | 60mOhm @ 25A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TPH3205WSBQAGANFET N-CH 650V 35A TO247-3 |
364 | 22.97 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Not For New Designs | N-Channel | GaNFET (Gallium Nitride) | 650 V | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | 2.6V @ 700µA | 42 nC @ 8 V | ±18V | 2200 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H150G4LSG-TR650 V 13 A GAN FET |
210 | 5.74 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TP65H050G4WS650 V 34 A GAN FET |
218 | 15.64 |
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Datasheet |
Tube | SuperGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | 10V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TP65H035G4WSQA650 V 46.5 GAN FET |
170 | 21.04 |
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Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 22 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
TP65H480G4JSG-TRGANFET N-CH 650V 3.6A 3PQFN |
238 | 4.17 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 3.6A (Tc) | 8V | 560mOhm @ 3.4A, 8V | 2.8V @ 500µA | 9 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 13.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TPH3206PSBGANFET N-CH 650V 16A TO220AB |
505 | 9.71 |
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Datasheet |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TPH3208PSGANFET N-CH 650V 20A TO220AB |
572 | 10.47 |
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Datasheet |
Tube | - | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
TPH3208LDGGANFET N-CH 650V 20A 3PQFN |
158 | 10.81 |
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Datasheet |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
TP90H180PSGANFET N-CH 900V 15A TO220AB |
173 | 11.40 |
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Datasheet |
Tube | - | Obsolete | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 900 V | 15A (Tc) | 10V | 205mOhm @ 10A, 10V | 2.6V @ 500µA | 10 nC @ 8 V | ±18V | 780 pF @ 600 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |