Manufacturer | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
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TPD3215MGANFET 2N-CH 600V 70A MODULE |
3985 | 175.13 |
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Datasheet |
Bulk | - | Obsolete | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 600V | 70A (Tc) | 34mOhm @ 30A, 8V | - | 28nC @ 8V | 2260pF @ 100V | 470W | -40°C ~ 150°C (TJ) | Through Hole |