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Manufacturer Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ 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Photo Mfr. Part # Stock Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
UJ3D1250K2

UJ3D1250K2

1200V 50A SIC SCHOTTKY DIODE G3,

UnitedSiC

1100 23.84
- +

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UJ3D1250K2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 2.34nF @ 1V, 1MHz 0 ns 400 µA @ 1200 V 1200 V 50A (DC) -55°C ~ 175°C 1.7 V @ 50 A
UJ3D1202TS

UJ3D1202TS

1200V 2A SIC SCHOTTKY DIODE G3,

UnitedSiC

8200 2.63
- +

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UJ3D1202TS

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 109pF @ 1V, 1MHz 0 ns 22 µA @ 1200 V 1200 V 2A (DC) -55°C ~ 175°C 1.6 V @ 5 A
UJ3D1725K2

UJ3D1725K2

1700V 25A SIC SCHOTTKY DIODE G3,

UnitedSiC

342 16.86
- +

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UJ3D1725K2

Datasheet

Tube Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1500pF @ 1V, 1MHz - 360 µA @ 1700 V 1700 V 25A -55°C ~ 175°C 1.7 V @ 25 A
UJ3D06560KSD

UJ3D06560KSD

650V 60A SIC SCHOTTKY DIODE G3,

UnitedSiC

414 21.25
- +

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UJ3D06560KSD

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1980pF @ 1V, 1MHz 0 ns 740 µA @ 650 V 650 V 30A (DC) -55°C ~ 175°C 1.7 V @ 30 A
UJ3D06510TS

UJ3D06510TS

650V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

2627 3.86
- +

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UJ3D06510TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 327pF @ 1V, 1MHz 0 ns 60 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
UJ3D06512TS

UJ3D06512TS

650V 12A SIC SCHOTTKY DIODE G3,

UnitedSiC

2751 5.25
- +

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UJ3D06512TS

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 392pF @ 1V, 1MHz 0 ns 80 µA @ 650 V 650 V 12A (DC) -55°C ~ 175°C 1.7 V @ 12 A
UJ3D1210TS

UJ3D1210TS

1200V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

3252 6.50
- +

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UJ3D1210TS

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 510pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 175°C 1.6 V @ 10 A
UJ3D1210KSD

UJ3D1210KSD

1200V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

571 7.09
- +

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UJ3D1210KSD

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 500pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 175°C 1.6 V @ 5 A
UJ3D1210KS

UJ3D1210KS

1200V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

420 6.54
- +

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UJ3D1210KS

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 510pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 175°C 1.6 V @ 10 A
UJ3D1210K2

UJ3D1210K2

1200V 10A SIC SCHOTTKY DIODE G3,

UnitedSiC

435 6.88
- +

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UJ3D1210K2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 510pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 175°C 1.6 V @ 10 A
UJ3D06516TS

UJ3D06516TS

650V 16A SIC SCHOTTKY DIODE G3,

UnitedSiC

676 7.00
- +

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UJ3D06516TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 500pF @ 1V, 1MHz 0 ns 100 µA @ 650 V 650 V 16A (DC) -55°C ~ 175°C 1.7 V @ 16 A
UJ3D06520TS

UJ3D06520TS

650V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC

987 7.85
- +

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UJ3D06520TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 654pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
UJ3D06508TS

UJ3D06508TS

650V 8A SIC SCHOTTKY DIODE G3, T

UnitedSiC

717 3.50
- +

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UJ3D06508TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 250pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 8A (DC) -55°C ~ 175°C 1.7 V @ 8 A
UJ3D06506TS

UJ3D06506TS

650V 6A SIC SCHOTTKY DIODE G3, T

UnitedSiC

983 2.92
- +

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UJ3D06506TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 196pF @ 1V, 1MHz 0 ns 40 µA @ 650 V 650 V 6A (DC) -55°C ~ 175°C 1.7 V @ 6 A
UJ3D1205TS

UJ3D1205TS

1200V 5A SIC SCHOTTKY DIODE G3,

UnitedSiC

3622 4.02
- +

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UJ3D1205TS

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 250pF @ 1V, 1MHz 0 ns 55 µA @ 1200 V 1200 V 5A (DC) -55°C ~ 175°C 1.6 V @ 5 A
UJ3D06504TS

UJ3D06504TS

650V 4A SIC SCHOTTKY DIODE G3, T

UnitedSiC

993 2.27
- +

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UJ3D06504TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 118pF @ 1V, 1MHz 0 ns 25 µA @ 650 V 650 V 4A (DC) -55°C ~ 175°C 1.7 V @ 4 A
UJ3D06520KSD

UJ3D06520KSD

650V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC

422 8.38
- +

  Add To Cart

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UJ3D06520KSD

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 654pF @ 1V, 1MHz 0 ns 120 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
UJ3D1220K2

UJ3D1220K2

1200V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC

536 10.29
- +

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UJ3D1220K2

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 810pF @ 1V, 1MHz 0 ns 190 µA @ 1200 V 1200 V 20A (DC) -55°C ~ 175°C 1.7 V @ 20 A
UJ3D1220KSD

UJ3D1220KSD

1200V 20A SIC SCHOTTKY DIODE G3,

UnitedSiC

445 11.55
- +

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UJ3D1220KSD

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1020pF @ 1V, 1MHz 0 ns 220 µA @ 1200 V 1200 V 10A (DC) -55°C ~ 175°C 1.6 V @ 10 A
UJ3D06530TS

UJ3D06530TS

650V 30A SIC SCHOTTKY DIODE G3,

UnitedSiC

829 11.78
- +

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UJ3D06530TS

Datasheet

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 990pF @ 1V, 1MHz 0 ns 370 µA @ 650 V 650 V 30A (DC) -55°C ~ 175°C 1.7 V @ 30 A
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