Photo | Mfr. Part # | Stock | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
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IV1D06006P3SIC DIODE, 650V 6A, DPAK |
2500 | 4.52 |
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Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 224pF @ 1V, 1MHz | 0 ns | 10 µA @ 650 V | 650 V | 16.7A (DC) | -55°C ~ 175°C | 1.65 V @ 6 A | ||||
IV1D12010T2SIC DIODE, 1200V 10A, TO-247-2 |
120 | 11.78 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 575pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 30A (DC) | -55°C ~ 175°C (TJ) | 1.8 V @ 10 A | ||||
IV1D12010O2SIC DIODE, 1200V 10A, TO-220-2 |
200 | 11.78 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 575pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 175°C (TJ) | 1.8 V @ 10 A | ||||
IV1D12015T2SIC DIODE, 1200V 15A, TO-247-2 |
120 | 14.55 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 888pF @ 1V, 1MHz | 0 ns | 80 µA @ 1200 V | 1200 V | 44A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A | ||||
IV1D06006O2SIC DIODE, 650V 6A, TO-220-2 |
200 | 4.37 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 212pF @ 1V, 1MHz | 0 ns | 10 µA @ 650 V | 650 V | 17.4A (DC) | -55°C ~ 175°C | 1.65 V @ 6 A | ||||
IV1D12005O2SIC DIODE, 1200V 5A, TO-220-2 |
200 | 6.54 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 320pF @ 1V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 17A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A | ||||
IV1D12020T2SIC DIODE, 1200V 20A, TO-247-2 |
120 | 19.17 |
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Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1114pF @ 1V, 1MHz | 0 ns | 120 µA @ 1200 V | 1200 V | 54A | -55°C ~ 175°C | 1.8 V @ 20 A |